SBB5082S SBB5082S InGaP HBT Active Bias Gain Block 50MHz to 6000MHz Package: Hermetic, 2-pin, 5.8mm x 2.8mm RFMDs SBB5082S is a high-performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias Features network in a hermetic package. The active bias network Single Fixed 5V Supply provides stable current over temperature and beta process Patented Self Bias Circuit and Thermal Design variations. The SBB5082S is designed for high linearity gain Hermetic Package for High- block military and industrial applications requiring excellent Reliability Applications gain flatness, small size, minimal external components, and OIP3 = 35dBm at 1950MHz hermetic packaging. RFMD can provide various levels of P1dB = 19dBm at 1950MHz device screening for military or high-reliability space applications. Applications Military and Space Communications Industrial Applications Aerospace and Defense Ordering Information SBB5082S Hermetic Package RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131119 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 6 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. SBB5082S Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Device Current (I ) 100 mA D Device Voltage (V ) 5.5 V D RFMD Green: RoHS compliant per EU RF Input Power +24 dBm Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of Junction Temperature (T ) +150 C J antimony trioxide in polymeric materials Operating Temperature Range -40 to +85 C and red phosphorus as a flame retardant, and <2% antimony solder. Storage Temperature Range -55 to +150 C Exceeding any one or a combination of the Absolute Moisture Sensitivity Level Hermetic Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute ESD Rating - Human Body Model (HBM) Class 1C Maximum Rating conditions to the device may reduce For reliable continuous operation, the device voltage and current must not exceed the maximum device reliability. Specified typical performance or operating values specified in the Absolute Maximum Ratings table above. functional operation of the device under Absolute Maximum Rating conditions is not implied. Bias conditions should also satisfy the following expression: I V < (T -T ) / R , j - l D D J L TH Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max Test Conditions: V = 5V, I = 71mA Typ. OIP3 Tone Spacing = D D General Performance 1MHz, P per tone = 0dBm, T = 25C, Z = Z = 50 , Tested with OUT L S L Bias Tees 18 20 22 dB 1950MHz Small Signal Gain 17 dB 4GHz Output Power at 1dB Compression 18 19 22 dBm 1950MHz OIP3 33 35 dBm F1 = 1950MHz, F2 = 1951MHz 10 15 dB 1950MHz Input Return Loss 13 dB 4GHz 10 14 dB 1950MHz Output Return Loss 8 dB 4GHz Reverse Isolation 17 22.5 dB 1950MHz Noise Figure 4.2 6.0 dB 1600MHz Operating Voltage 5.0 V Operating Current 60 71 92.0 mA Thermal Resistance 87 C/W Junction to case R F Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131119 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 6