T1G3000532-SM 5W, 32V, 0.03 3.5 GHz, GaN RF Input-Matched Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency: 30 MHz to 3.5 GHz Output Power (P ): 5.7 W at 3.0 GHz 3dB Linear Gain: 15.7 dB at 3 GHz Typical PAE : 64.7% at 3GHz 3dB Operating Voltage: 32 V Low thermal resistance package CW and Pulse capable General Description Pin Configuration Pin No. Label The TriQuint T1G3000532-SM is a 5W (P ), 50-input 3dB 20 - 21 V / RF OUT D matched discrete GaN on SiC HEMT which operates from 30MHz to 3.5 GHz. The device is constructed with 5 V / RF IN G TriQuints proven TQGaN25 process, which features Off-chip Shunt Cap for Low- 11 advanced field plate techniques to optimize power and Frequency Gain efficiency at high drain bias operating conditions. This Back side Source optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description T1G3000532-SM EAR99 QFN Packaged Part T1G3000532-SM- EAR99 0.5 3 GHz EVB EVB Datasheet: Rev 001- 06-13-14 Disclaimer: Subject to change without notice - 1 of 21 - 2014 TriQuint www.triquint.com T1G3000532-SM 5W, 32V, 0.03 3.5 GHz, GaN RF Input-Matched Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Breakdown Voltage (BV ) 100 V Drain Voltage (V ) 32 V (Typ.) DG D Gate Voltage Range (V ) -50 to 0 V Drain Quiescent Current (I ) 25 mA (Typ.) DQ G Drain Current (I ) 0.6 A Peak Drain Current ( I ) 326 mA (Typ.) D D Gate Current (I ) -1.25 to 2.1 mA Gate Voltage (V ) -2.7 V (Typ.) G G Power Dissipation (P ) 7.5 W Channel Temperature (T ) 225 C (Max) D CH Power Dissipation, CW (P ) 7.05 W (Max) RF Input Power, CW, D 25 dBm T = 25C (P ) IN Power Dissipation, Pulse (P ) 9.1 W (Max) D Channel Temperature (T ) 275 C Electrical specifications are measured at specified test conditions. CH Specifications are not guaranteed over all recommended Mounting Temperature 320 C operating conditions. (30 Seconds) Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. RF Characterization Load Pull Performance at 1.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 32 V, I = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle A D DQ Symbol Parameter Min Typical Max Units G Linear Gain, Power Tuned 16.5 dB LIN Output Power at 3 dB Gain Compression, Power P 5.9 W 3dB Tuned Power-Added Efficiency at 3 dB Gain PAE 77.3 % 3dB Compression, Efficiency Tuned G Gain at 3 dB Compression, Power Tuned 13.5 dB 3dB RF Characterization Load Pull Performance at 1.5 GHz Test conditions unless otherwise noted: T = 25 C, V = 32 V, I = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle A D DQ Symbol Parameter Min Typical Max Units G Linear Gain, Power Tuned 17.5 dB LIN Output Power at 3 dB Gain Compression, Power P 5.5 W 3dB Tuned Power-Added Efficiency at 3 dB Gain PAE 70.5 % 3dB Compression, Efficiency Tuned G Gain at 3 dB Compression, Power Tuned 14.5 dB 3dB Datasheet: Rev 001- 06-13-14 Disclaimer: Subject to change without notice - 2 of 21 - 2014 TriQuint www.triquint.com