T2G6000528-Q3 10W, 28V DC 6 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency: DC to 6 GHz Output Power (P3dB): 10 W at 3.3 GHz 11 Linear Gain: >17 dB at 3.3 GHz Operating Voltage: 28 V Low thermal resistance package 22 General Description Pin Configuration The TriQuint T2G6000528-Q3 is a 10W (P ) discrete 3dB Pin No. Label GaN on SiC HEMT which operates from DC to 6 GHz. 1 V / RF OUT D The device is constructed with TriQuints proven 2 VG / RF IN TQGaN25 production process, which features advanced Flange Source field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier Ordering Information line-ups and lower thermal management costs. Part ECCN Description Lead-free and ROHS compliant Packaged part T2G6000528-Q3 EAR99 Flangeless Evaluation boards are available upon request. T2G6000528-Q3- 3.0-3.5 GHz EAR99 EVB3 Evaluation Board T2G6000528-Q3- 3.8-4.2 GHz EAR99 EVB5 Evaluation Board T2G6000528-Q3- 5.8 GHz EAR99 EVB6 Evaluation Board T2G6000528-Q3- 1.9 2.7 GHz EAR99 EVB1 Evaluation Board Datasheet: Rev C 11-14-14 Disclaimer: Subject to change without notice - 1 of 13 - 2013 TriQuint www.triquint.com T2G6000528-Q3 10W, 28V DC 6 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Breakdown Voltage (BV ) 100 V (Min.) Drain Voltage (V ) 28 V (Typ.) DG D Drain Gate Voltage (VDG) 40 V Drain Quiescent Current (IDQ) 50 mA (Typ.) Gate Voltage Range (V ) -10 to 0 V Peak Drain Current ( I ) 650 mA (Typ.) G D Drain Current (ID) 2.5 A Gate Voltage (VG) -3.0 V (Typ.) Gate Current (I ) -2.5 to 7 mA Channel Temperature (T ) 225 C (Max) G CH Power Dissipation (PD) 15 W Power Dissipation, CW (PD) 11 W (Max) Power Dissipation, Pulse (PD) 12.5 W (Max) RF Input Power, CW, 34 dBm T = 25C (PIN) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended Channel Temperature (TCH) 275 C operating conditions. Mounting Temperature 320 C (30 Seconds) Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. (1) RF Characterization Load Pull Performance at 3.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 28 V, I = 50 mA A D DQ Symbol Parameter Min Typical Max Units GLIN Linear Gain 18.5 dB P Output Power at 3 dB Gain Compression 9.2 W 3dB DE3dB Drain Efficiency at 3 dB Gain Compression 57.5 % Power-Added Efficiency at 3 dB Gain PAE 55.9 % 3dB Compression G3dB Gain at 3 dB Compression 15.5 dB Notes: 1. V = 28 V, I = 50 mA Pulse: 100s, 20% DS DQ (1) RF Characterization Load Pull Performance at 6.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 28 V, I = 50 mA A D DQ Symbol Parameter Min Typical Max Units GLIN Linear Gain 15.0 dB P3dB Output Power at 3 dB Gain Compression 9.3 W DE Drain Efficiency at 3 dB Gain Compression 63.0 % 3dB Power-Added Efficiency at 3 dB Gain PAE3dB 59.0 % Compression G Gain at 3 dB Compression 12.0 dB 3dB Notes: 1. VDS = 28 V, IDQ = 50 mA Pulse: 100s, 20% Datasheet: Rev C 11-14-14 Disclaimer: Subject to change without notice - 2 of 13 - 2013 TriQuint www.triquint.com