T2G6001528-SG 15W, 28V, DC 6 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency: DC to 6 GHz Output Power (P ): 17 W at 3.3 GHz 3dB 11 Linear Gain: >15 dB at 3.3 GHz Operating Voltage: 28 V Low thermal resistance package 22 General Description Pin Configuration The TriQuint T2G6001528-SG is a 15W (P ) discrete 3dB Pin No. Label GaN on SiC HEMT which operates from DC to 6.0 GHz. 1 V / RF OUT D The device is constructed with TriQuints proven 2 V / RF IN G TQGaN25 process, which features advanced field plate Flange Source techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description Packaged part T2G6001528-SG EAR99 Flangeless T2G6001528-SG- 3.1 3.5 GHz EAR99 EVB1 Evaluation Board Datasheet: Rev A- 02-27-14 Disclaimer: Subject to change without notice - 1 of 18 - 2014 TriQuint www.triquint.com T2G6001528-SG 15W, 28V, DC 6 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Breakdown Voltage (BV ) 100 V Drain Voltage (V ) 28 V (Typ.) DG D Gate Voltage Range (V ) -7 to 0 V Drain Quiescent Current (I ) 100 mA (Typ.) G DQ Drain Current (I ) 5 A Peak Drain Current ( I ) 1400 mA (Typ.) D D Gate Current (I ) -5 to 14 mA Gate Voltage (V ) -3.2 V (Typ.) G G Power Dissipation (P ) 28 W Channel Temperature (T ) 225 C (Max) D CH Power Dissipation, CW (P ) 20.9 W (Max) RF Input Power, CW, D 36 dBm T = 25C (P ) IN Power Dissipation, Pulse (P ) 22.5 W (Max) D Electrical specifications are measured at specified test conditions. Channel Temperature (T ) 275 C CH Specifications are not guaranteed over all recommended Mounting Temperature 320 C operating conditions. (30 Seconds) Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. RF Characterization Load Pull Performance at 1.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 28 V, I = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle A D DQ Symbol Parameter Min Typical Max Units G Linear Gain, Power Tuned 24 dB LIN Output Power at 3 dB Gain Compression, Power P 18 W 3dB Tuned Power-Added Efficiency at 3 dB Gain PAE 76.9 % 3dB Compression, Efficiency Tuned G Gain at 3 dB Compression, Power Tuned 21 dB 3dB RF Characterization Load Pull Performance at 2.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 28 V, I = 100 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle A D DQ Symbol Parameter Min Typical Max Units G Linear Gain, Power Tuned 18.5 dB LIN Output Power at 3 dB Gain Compression, Power P 18.6 W 3dB Tuned Power-Added Efficiency at 3 dB Gain PAE 61.5 % 3dB Compression, Efficiency Tuned G Gain at 3 dB Compression, Power Tuned 15.5 dB 3dB Datasheet: Rev A- 02-27-14 Disclaimer: Subject to change without notice - 2 of 18 - 2014 TriQuint www.triquint.com