TGC4403 8 - 15 GHz Doubler with Amplifier Key Features RF Output Frequency Range: 16-30 GHz Input Frequency Range: 8 - 15 GHz 22 dBm Nominal Pout 20 dB Gain 10 dBc Input Frequency Isolation Bias: Vd = 5 V, Id = 150 mA, Vg = -0.5 V Typical Technology: 3MI 0.25 um Power PHEMT Chip Dimensions: 2.068 x 0.88 x 0.1 mm Measured Performance Primary Applications Bias conditions: Vd = 5 V, Id = 150 mA, Vdbl= -0.8 V, Point-to-Point Radio Vg = -0.5 V Typical Ka Band Sat-Com 30 25 20 Product Description Pin = 2 dBm The TriQuint TGC4403 MMIC combines a 15 frequency doubler with a 3-stage amplifier, operating at input frequencies of 8 - 15 GHz. With 10 greater than 30 dBc suppression measured at the 5 output between the input frequency and doubled frequency, the TGC4403 achieves 22 dBm output 0 power, with 2 dBm input power. This performance 16 18 20 22 24 26 28 30 makes this doubler ideally suited for Point to Point 2 x Input Frequency (GHz) Radios and Ka Band satellite ground terminal applications. The TGC4403 utilizes TriQuints robust 0.25um power pHEMT process coupled 20 with 3 layer Metal Inteconnect (3MI) technology. Output 3X Fund Freq - The TGC4403 provides the frequency doubling Output Input Fund 10 2 function in an extremely compact (< 1.8 mm ) chip Fund Freq - Freq Input footprint. Fund Freq 0 Each device is 100% DC and RF tested onwafer -10 to ensure performance compliance. The device is Fundamental available in chip form. -20 3x Fund The TGC4403 has a protective surface passivation -30 layer providing environmental robustness. -40 Lead-free and RoHS compliant. 5 10 15 20 25 30 35 40 45 Frequency (GHz) Datasheet subject to change without notice. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com Dec 2008 Rev B Output Power at 2 x Input Freq (dBm) Isolation (dBc)TGC4403 Table I Absolute Maximum Ratings 1/ Symbol Parameter Value Notes Vd-Vg Drain to Gate Voltage 12 V Vd Drain Voltage 8 V 2/ Vdbl Doubler Voltage Range -5 to 0 V Vg Gate Voltage Range -5 to 0 V Id Positive Current 280 mA 2/ Ig Gate Current Range -1 to 23.mA Idbl Doubler Current Range -0.6 to 16.8 mA Pin Input Continuous Wave Power 18.2 dBm 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol Parameter 1/ Value Vd Drain Voltage 5 V Id Drain Current (quiescent) 150 mA Id drive Drain Current with RF input = 2 dBm 170 mA Vg Gate Voltage -0.5 V Vdbl Doubler Voltage -0.8 V 1/ See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com Dec 2008 Rev B