Preliminary Datasheet 2SK1070 R07DS0282EJ0400 Rev.4.00 Silicon N-Channel Junction FET Jan 10, 2014 Application Low frequency / High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 1. Drain 2. Source 2 3. Gate Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Gate to drain voltage V 22 V GDO Gate to source voltage V 22 V GSO Drain current I 50 mA D Gate current I 10 mA G Channel power dissipation Pch 150 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C R07DS0282EJ0400 Rev.4.00 Page 1 of 5 Jan 10, 2014 2SK1070 Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Gate cutoff current I 10 nA V = 15 V, V = 0 GSS GS DS Gate to source breakdown voltage V 22 V I = 10 A, V = 0 (BR)GSS G DS 1 Drain current I * 12 40 mA V = 5 V, V = 0, Pulse test DSS DS GS Gate to source cutoff voltage V 0 2.5 V V = 5 V, I = 10 A GS(off) DS D Forward transfer admittance y 20 30 mS V = 5 V, V = 0, f = 1 kHz fs DS GS Input capacitance Ciss 9 pF V = 5 V, V = 0, f = 1 MHz DS GS Notes: 1. The 2SK1070 is grouped by I as follows. DSS Grade C D E Mark PIC PID PIE I 12 to 22 18 to 30 27 to 40 DSS Main Characteristics Maximum Channel Dissipation Curve Typical Output Characteristics 20 150 16 100 12 8 50 4 02 4 6 8 10 0 50 100 150 Ambient Temperature Ta (C) Drain to Source Voltage V (V) DS Forward Transfer Admittance Typical Transfer Characteristics vs. Drain Current 20 100 V = 5 V DS V = 5 V DS f = 1 kHz 16 10 12 8 1.0 4 0 0.1 1.25 1.0 0.75 0.5 0.25 0 0.1 1.0 10 100 Gate to Source Voltage V (V) Drain Current I (mA) GS D R07DS0282EJ0400 Rev.4.00 Page 2 of 5 Jan 10, 2014 0.6 0.3 0.4 0.5 V = 0 V GS 0.1 0.2 Channel Power Dissipation Pch (mW) Drain Current I (mA) D Forward Transfer Admittance y (mS) fs Drain Current I (mA) D