BCR12CM-12LA
Triac
Medium Power Use
REJ03G0297-0300
Rev.3.00
Nov 30, 2007
Features
I : 12 A Non-Insulated Type
T (RMS)
V : 600 V Planar Passivation Type
DRM
Note6
I , I , I : 30 mA (20 mA)
FGTI RGTI RGT III
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
1. T Terminal
1
2. T Terminal
2
3
3. Gate Terminal
1
4. T Terminal
2
1
2
3
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, and solenoid driver, small motor control,
copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter Symbol Unit
12
Note1
Repetitive peak off-state voltage V 600 V
DRM
Note1
Non-repetitive peak off-state voltage V 720 V
DSM
REJ03G0297-0300 Rev.3.00 Nov 30, 2007
Page 1 of 7 BCR12CM-12LA
Parameter Symbol Ratings Unit Conditions
RMS on-state current I 12 A Commercial frequency, sine full wave
T (RMS)
Note3
360 conduction, Tc = 98C
Surge on-state current I 120 A 60Hz sinewave 1 full cycle, peak value,
TSM
non-repetitive
2 2 2
I t for fusing It 60 A s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation P 5 W
GM
Average gate power dissipation P 0.5 W
G (AV)
Peak gate voltage V 10 V
GM
Peak gate current I 2 A
GM
Junction temperature Tj 40 to +125 C
Storage temperature Tstg 40 to +125 C
Mass 2.0 g Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current I 2.0 mA Tj = 125C, V applied
DRM DRM
On-state voltage V 1.6 V Tc = 25C, I = 20 A,
TM TM
Instantaneous measurement
Note2
Gate trigger voltage V 1.5 V Tj = 25C, V = 6 V, R = 6 ,
FGT D L
R = 330
V 1.5 V G
RGT
V 1.5 V
RGT
Note2 Note6
Gate trigger current I 30 mA Tj = 25C, V = 6 V, R = 6 ,
FGT D L
Note6
R = 330
I 30 mA G
RGT
Note6
I 30 mA
RGT
Gate non-trigger voltage V 0.2 V Tj = 125C, V = 1/2 V
GD D DRM
Note3 Note4
Thermal resistance R 1.8 C/W Junction to case
th (j-c)
Critical-rate of rise of off-state (dv/dt)c 10 V/s Tj = 125C
Note5
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T tab 1.5 mm away from the molded case.
2
4. The contact thermal resistance R in case of greasing is 1.0C/W.
th (c-f)
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivity (I 20 mA) is also available. (I item: 1)
GT GT
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Supply Voltage Time
Tj = 125C
(di/dt)c
2. Rate of decay of on-state commutating current
Time
Main Current
(di/dt)c = 6.0 A/ms
Time
3. Peak off-state voltage Main Voltage
V = 400 V (dv/dt)c
D V
D
REJ03G0297-0300 Rev.3.00 Nov 30, 2007
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