F2932 Datasheet High Reliability SP2T RF Switch 50 MHz to 8000 MHz GENERAL DESCRIPTION FEATURES The F2932 is a high reliability, low insertion loss, 50 High Isolation: SP2T absorptive RF switch designed for a multitude of o 70 dB 1 GHz wireless and other RF applications. This device covers o 67 dB 2 GHz a broad frequency range from 50 MHz to 8000 MHz. o 65 dB 3 GHz In addition to providing low insertion loss, the F2932 o 66 dB 4 GHz also delivers high linearity and high isolation High Linearity: performance while providing a 50 termination to the o IIP2 of 111 dBm unused RF input port. o IIP3 of 64 dBm 2 GHz Wide Single Positive Supply Voltage Range The F2932 uses a single positive supply voltage of 3.3 V and 1.8 V compatible control logic 2.7 V to 5.5 V supporting three states using either Operating temperature -40 C to +105 C 3.3 V or 1.8 V control logic. 4 mm x 4 mm 16 pin QFN package COMPETITIVE ADVANTAGE FUNCTIONAL BLOCK DIAGRAM The F2932 provides the following advantages VDD VCTL EN Insertion Loss = 0.79 dB* RFX to RFC Isolation = 67 dB* Control IIP3 = +64 dBm* Circuit Active Port Operating Power Handling = 34 dBm RF2 Term Port Operating Power Handling = 27 dBm Extended Temperature Range = -40C to 105C 50 * 2 GHZ RFC 50 RF1 APPLICATIONS Base Station 2G, 3G, 4G Portable Wireless Repeaters and E911 systems Digital Pre-Distortion Point to Point Infrastructure ORDERING INFORMATION Public Safety Infrastructure WIMAX Receivers and Transmitters Tape & Military Systems, JTRS radios Reel RFID handheld and portable readers F2932NBGP8 Test / ATE Equipment Green F2932, Rev 1 05/12/2016 1 F2932 ABSOLUTE MAXIMUM RATINGS Parameter / Condition Symbol Min Max Unit V to GND V -0.3 +6.0 V DD DD Lower of VCTL, EN to GND V -0.3 V logic 3.6, V +0.3 DD RF1, RF2, RFC to GND V -0.3 +0.3 V RF RF1 or RF2 as an input P 36 RF12 (Connected to RFC) RFC as an input P 36 RFC (Connected to RF1 or RF2) 1 RF Input Power RFC as an input P 30 dBm RFC OFF (All off state) RF1 or RF2 as input P 30 RF12 TERM (Terminated states) RF1 and RF2 as inputs 2 P 30 RF12 OFF (All Off State) Maximum Junction Temperature T +140 C Jmax Storage Temperature Range T -65 +150 C ST Lead Temperature (soldering, 10s) T +260 C LEAD ESD Voltage HBM (Per JESD22-A114) V Class 2 (2500V) ESDHBM ESD Voltage CDM (Per JESD22-C101) V Class C3 (1000V) ESDCDM Note 1: V = 2.7 V to 5.5 V, 50 MHz F 8000 MHz, Tc= 105 C, Z = Z = 50 ohms. DD RF S L Note 2: Each port. Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS (Junction Ambient) 60 C/W JA (Junction Case) The Case is defined as the exposed paddle 3.9 C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL 1 High Reliability SP2T RF Switch 2 F2932, Rev 1 05/12/2016