F2933NBGP8 Renesas

F2933 Datasheet High Reliability SP2T RF Switch 50 MHz to 8000 MHz GENERAL DESCRIPTION FEATURES The F2933 is a high reliability, low insertion loss, 50 High Isolation: SP2T absorptive RF switch designed for a multitude of o 70 dB 1 GHz wireless and other RF applications. This device covers o 67 dB 2 GHz a broad frequency range from 50 MHz to 8000 MHz. o 65 dB 3 GHz In addition to providing low insertion loss, the F2933 o 66 dB 4 GHz also delivers high linearity and high isolation High Linearity: performance while providing a 50 termination to the o IIP2 of 111 dBm unused RF input port. o IIP3 of 64 dBm 2 GHz Wide Single Positive Supply Voltage Range The F2933 uses a single positive supply voltage of 3.3 V and 1.8 V compatible control logic 2.7 V to 5.5 V supporting three states using either Operating temperature -40 C to +105 C 3.3 V or 1.8 V control logic. 4 mm x 4 mm 16 pin QFN package COMPETITIVE ADVANTAGE FUNCTIONAL BLOCK DIAGRAM The F2933 provides the following advantages VDD VCTL Insertion Loss = 0.79 dB* RFX to RFC Isolation = 67 dB* Control Circuit IIP3 = +64 dBm* Active Port Operating Power Handling = 34 dBm RF1 Term Port Operating Power Handling = 27 dBm Extended Temperature Range = -40C to 105C 50 RFC * 2 GHZ 50 RF2 APPLICATIONS Base Station 2G, 3G, 4G Portable Wireless Repeaters and E911 systems Digital Pre-Distortion Point to Point Infrastructure ORDERING INFORMATION Public Safety Infrastructure Tape & WIMAX Receivers and Transmitters Reel Military Systems, JTRS radios RFID handheld and portable readers F2933NBGP8 Test / ATE Equipment Green F2933, Rev O 05/04/2016 1 F2933 ABSOLUTE MAXIMUM RATINGS Parameter / Condition Symbol Min Max Unit V to GND V -0.3 +6.0 V DD DD Lower of VCTL to GND V -0.3 V logic 3.6, V +0.3 DD RF1, RF2, RFC to GND V -0.3 +0.3 V RF RF1 or RF2 as an input P 36 RF12 (Connected to RFC) 1 RF Input Power RFC as an input P 36 dBm RFC (Connected to RF1 or RF2) RF1 or RF2 as input P 30 RF12 TERM (Terminated states) Maximum Junction Temperature T +140 C Jmax Storage Temperature Range T -65 +150 C ST Lead Temperature (soldering, 10s) T +260 C LEAD ESD Voltage HBM (Per JESD22-A114) V Class 2 (2000V) ESDHBM ESD Voltage CDM (Per JESD22-C101) V Class C3 (1000V) ESDCDM Note 1: V = 2.7 V to 5.5 V, 50 MHz F 8000 MHz, Tc= 105 C, Z = Z = 50 ohms. DD RF S L Note 2: Each port. Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS (Junction Ambient) 60 C/W JA (Junction Case) The Case is defined as the exposed paddle 3.9 C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL1 High Reliability SP2T RF Switch 2 F2933, Rev O 05/04/2016