UMF32NTR ROHM

Power management (dual transistors) EMF32 / UMF32N DTA143T and 2SK3019 are housed independently in a EMT6 package. Application Dimensions (Unit : mm) Power management circuit ( ) (3) 4 ( ) ( ) 5 2 Features (6) (1) 1.2 1.6 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. ROHM : EMT6 Each lead has same dimensions Structure Silicon epitaxial planar transistor Abbreviated symbol : F32 Inner circuits 1.25 1pin mark (3) (2) (1) 2.1 Tr1 0.1Min. Tr2 Each lead has ROHM : UMT6 same dimensions (4) (5) (6) Abbreviated symbol : F32 Packaging specifications Type EMF32 UMF32N Package EMT6 UMT6 Marking F32 F32 Code T2R TR Basic ordering unit (pieces) 8000 3000 www.rohm.com 2010.09 - Rev.A 1/4 c 2010 ROHM Co., Ltd. All rights reserved. 0.2 0.15 (5) ( ) ( ) 4 6 0.13 0.22 (1) (3) (2) 0.65 0.65 0.7 0.5 0.5 1.0 1.3 0.5 0.9 1.6 2.0 EMF32 / UMF32N Data Sheet Absolute maximum ratings (Ta=25C) Tr1 Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA 1 Power dissipation PC 150(TOTAL) mW Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Tr2 Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 100 mA Drain current 1 Pulsed IDP 200 mA Continuous IDR 100 mA Reverse drain 1 current Pulsed IDRP 200 mA 2 Total power dissipation PD 150(TOTAL) mW Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 PW10ms Duty cycle50% 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Electrical characteristics (Ta=25C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 50 VIC= 50A Collector-emitter breakdown voltage BVCEO 50 V IC= 1mA Emitter-base breakdown voltage BVEBO 5 V IE= 50A Collector cutoff current ICBO 0.5 A VCB= 50V Emitter cutoff current IEBO 0.5 A VEB= 4V Collector-emitter saturation voltage VCE(sat) 0.3 V IC/IB= 5mA/ 0.25mA DC current transfer ratio hFE 100 250 600 IC= 1mA, VCE= 5V R1 3.29 4.7 6.11 k Input resistance Transition frequency fT 250 MHz VCE= 10V, IE=5mA, f=100MHz Transition frequency of the device Tr2 Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 1 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 30 V ID=10A, VGS=0V Zero gate voltage drain current IDSS 1.0 A VDS=30V, VGS=0V Gate-threshold voltage VGS(th) 0.8 1.5 VVDS=3V, ID=100A 58 ID=10mA, VGS=4V Static drain-source RDS(on) on-state resistance 713 ID=1mA, VGS=2.5V Yfs Forward transfer admittance 20 ms VDS=3V, ID=10mA Input capacitance Ciss 13 pF Output capacitance Coss 9 pF VDS=5V, VGS=0V, f=1MHz Crss Reverce transfer capacitance 4 pF Turn-on delay time td(on) 15 ns ID=10mA, VDD 5V, Rise time tr 35 ns VGS=5V, RL=500, Turn-off delay time td(off) 80 ns RGS=10 Fall time tf 80 ns www.rohm.com 2010.09 - Rev.A 2/4 c 2010 ROHM Co., Ltd. All rights reserved.