TSM090N03CP 30V N-Channel Power MOSFET TO-252 Key Parameter Performance Pin Definition: (DPAK) 1. Gate Parameter Value Unit 2. Drain 3. Source V 30 V DS V = 10V 9 GS R (max) m DS(on) V = 4.5V GS 13 Q 7.5 nC g Block Diagram Ordering Information Ordering code Package Packing TSM090N03CP ROG TO-252 2.5kpcs / 13 Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET o Absolute Maximum Ratings (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit 30 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS 55 Tc=25C A Continuous Drain Current I D 35 Tc=100C A (Note 1) 220 Pulsed Drain Current I A DM (Note 2) Single Pulse Avalanche Energy E 45 mJ AS (Note 2) 30 Single Pulse Avalanche Current I A AS o T =25 C 40 W C Total Power Dissipation P D o Derate above T =25 C 0.32 W/C C Operating Junction Temperature T 150 C J o -55 to +150 Storage Temperature Range T C STG Thermal Performance Parameter Symbol Limit Unit o C/W Thermal Resistance - Junction to Case R 3.1 JC o C/W Thermal Resistance - Junction to Ambient R 62 JA 1/5 Version: B1807 TSM090N03CP 30V N-Channel Power MOSFET o Electrical Specifications (T =25 C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS V = 10V, I = 16A -- 7.5 9 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 8A -- 10 13 GS D Gate Threshold Voltage V = V , I = 250A V DS GS D GS(TH) 1 1.6 2.5 V V = 30V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 24V, T = 125C -- -- 10 DS J Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Forward Transconductance V = 10V, I = 8A g DS D fs -- 14 -- S Dynamic (Note 3,4) Total Gate Charge Q -- 7.5 -- g V = 15V, I = 20A, (Note 3,4) DS D Gate-Source Charge Q -- 1.3 -- nC gs V = 4.5V GS (Note 3,4) Gate-Drain Charge Q gd -- 4.5 -- Input Capacitance C -- 750 -- iss V = 25V, V = 0V, DS GS Output Capacitance C -- 150 -- pF oss f = 1MHz Reverse Transfer Capacitance C -- 110 -- rss Gate Resistance f = 1MHz R g -- 2.7 -- Switching (Note 3,4) Turn-On Delay Time t -- 4.8 -- d(on) (Note 3,4) Turn-On Rise Time t -- 12.5 -- r V =15V , V =10V , DD GS ns (Note 3,4) R =3.3, I =-15A G D Turn-Off Delay Time t d(off) -- 27.6 -- (Note 3,4) Turn-Off Fall Time t f -- 8.2 -- Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode 55 I -- -- A S Pulse Drain-Source Diode 220 I -- -- A SM Diode-Source Forward Voltage V = 0V, I = 1A V 1 GS S SD -- -- V Note: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. V =25V,V =10V,L=0.1mH,I =30A.,R =25,Starting T =25 DD GS AS G J 3. The data tested by pulsed , pulse width 300s, duty cycle 2% 4. Essentially independent of operating temperature. 2/5 Version: B1807