HN1D01FE(TE85L,F) Toshiba

HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : V = 0.92V (typ.) F (3) z Fast reverse recovery time : t = 1.6ns (typ.) rr z Small total capacitance : C = 2.2pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R 1. CATHODE Maximum (peak) forward current I 300* mA FM 2. CATHODE 3. ANODE Average forward current I 100* mA O 4. CATHODE Surge current (10ms) I 2* A 5. CATHODE FSM 6. ANODE Power dissipation P 100** mW Junction temperature T 150 C j Storage temperature T 55 to 150 C stg JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high 1-2X1A temperature/current/voltage and the significant change in TOSHIBA temperature, etc.) may cause this product to decrease in the Weight: 0.003g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4). Where Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those for a single diode. ** : Total rating. Electrical Characteristics (Q1, Q2, Q3, Q4 Common Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.61 F (1) F Forward voltage V I = 10mA 0.74 V F (2) F V I = 100mA 0.92 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MHz 2.2 pF T R I = 10mA (fig.1) Reverse recovery time t 1.6 ns rr F Start of commercial production 2002-04 1 2014-03-01 HN1D01FE Pin Assignment Marking (Top View) Unit 2 6 5 4 Q3 Q4 A2 Q1 Q2 1 2 3 Unit 1 Fig. 1 Reverse Recovery Time (t ) Test Circuit rr 2 2014-03-01