BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES Controlled avalanche characteristic Low forward voltage Ultra fast recovery time Glass passivated junction Hermetically sealed package Material categorization: 949539 For definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA APPLICATIONS Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, Very fast rectification diode e.g. for switch mode power method 2026 supply Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYV27-200 BYV27-200-TR 5000 per 10 tape and reel 25 000 BYV27-200 BYV27-200-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYV27-50 V = 50 V I = 2 A SOD-57 R F(AV) BYV27-100 V = 100 V I = 2 A SOD-57 R F(AV) BYV27-150 V = 150 V I = 2 A SOD-57 R F(AV) BYV27-200 V = 200 V I = 2 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYV27-50 V 55 V RSM BYV27-100 V 110 V RSM Peak reverse voltage, non repetitive See electrical characteristics BYV27-150 V 165 V RSM BYV27-200 V 220 V RSM BYV27-50 V = V 50 V R RRM BYV27-100 V = V 100 V Reverse voltage = repetitive peak reverse R RRM See electrical characteristics voltage BYV27-150 V = V 150 V R RRM BYV27-200 V = V 200 V R RRM Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM Repetitive peak forward current I 15 A FRM Average forward current I 2A F(AV) Pulse energy in avalanche mode, non repetitive (inductive I = 1 A, T = 175 C E 20 mJ (BR)R j R load switch off) Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA Rev. 1.8, 04-Sep-12 Document Number: 86042 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 3 A V - - 1.07 V F F Forward voltage I = 3 A, T = 175 C V - - 0.88 V F j F V = V I -- 1 A R RRM R Reverse current V I - - 100 A RSM R V = V , T = 165 C I - - 150 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - - 25 ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 120 2.5 ll V = V R RRM half sine wave 100 2.0 R = 45 K/W thJA l = 10 mm 80 1.5 T = constant L 60 1.0 40 0.5 20 R = 100 K/W thJA PCB: d = 25 mm 0 0.0 0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 160 180 949526 l - Lead Length (mm) 16383 T - Ambient Temperature (C) amb Fig. 1 - Typ. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 100 1000 V = V R RRM 10 T = 175 C j 100 T = 25 C j 1 0.1 10 0.01 1 0.001 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 16384 16382 T - Junction Temperature (C) V - Forward Voltage (V) j F Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature Rev. 1.8, 04-Sep-12 Document Number: 86042 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 R - Therm.Resist.Junction/Ambient (K/W) I - Forward Current (A) thJA F I - Average Forward Current (A) FAV I - Reverse Current (A) R