IRFIZ34G www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Isolated package High voltage isolation = 2.5 kV (t = 60 s RMS f = 60 Hz) Sink to lead creepage distance = 4.8 mm G 175 C operating temperature Dynamic dV/dt rating SS S Low thermal resistance DD G N-Channel MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY DESCRIPTION V (V) 60 DS Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, R ()V = 10 V 0.050 DS(on) GS ruggedized device design, low on-resistance and cost Q (Max.) (nC) 46 g effectiveness. Q (nC) 11 gs The TO-220 FULLPAK eliminates the need for additiona l Q (nC) 22 gd insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation Configuration Single capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 10 0 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFIZ34GPbF ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS T = 25 C 20 C Continuous drain current V at 10 V I GS D T = 100 C 14 A C a Pulsed drain current I 80 DM Linear derating factor 0.28 W/C b Single pulse avalanche energy E 300 mJ AS Maximum power dissipation T = 25 C P 42 W C D c Peak diode recovery dV/dt dV/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 875 H, R = 25 , I = 20 A (see fig. 12) DD J G AS c. I 30 A, dI/dt 200 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case S21-0474-Rev. B, 17-May-2021 Document Number: 91188 1 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFIZ34G www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.6 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.065 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 12 A - - 0.050 DS(on) GS D b Forward transconductance g V = 25 V, I = 12 A 9.2 - - S fs DS D Dynamic Input capacitance C - 1200 - iss V = 0 V, GS Output capacitance C -V = 25 V, 600- oss DS pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -100- rss Drain to sink capacitance C f = 1.0 MHz - 12 - Total gate charge Q -- 46 g I = 30 A, V = 48 V D DS Gate-source charge Q --V = 10 V 11 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --22 gd Turn-on delay time t -13 - d(on) V = 30 V, I = 30 A Rise time t DD D - 100 - r R = 12 R = 1.0 , ns G , D Turn-off delay time t -2 b 9- d(off) see fig. 10 Fall time t -52- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 20 S showing the A integral reverse G p - n junction diode a Pulsed diode forward current I -- 80 SM S b Body diode voltage V T = 25 C, I = 20 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 120 230 ns rr b T = 25 C, I = 30 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.70 1.4 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0474-Rev. B, 17-May-2021 Document Number: 91188 2 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000