New Product SiR166DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES a V (V) R () Q (Typ.) I (A) DS DS(on) g D Halogen-free According to IEC 61249-2-21 g Definition 0.0032 at V = 10 V GS 40 30 25 nC TrenchFET Power MOSFET g 0.0040 at V = 4.5 V GS 40 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS Notebook PC Core S 6.15 mm 5.15 mm D 1 - Low Side S 2 S VRM 3 G 4 POL D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: SiR166DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS g T = 25 C C 40 g T = 70 C C 40 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 29.5 b, c T = 70 C A 21 A I Pulsed Drain Current 70 DM g T = 25 C C 40 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 I Single Pulse Avalanche Current 40 AS L = 0.1 mH Single Pulse Avalanche Energy E 80 mJ AS T = 25 C 48 C T = 70 C 31 C Maximum Power Dissipation P W D b, c T = 25 C 5.0 A b, c T = 70 C A 3.2 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 20 25 thJA Maximum Junction-to-Ambient C/W R Maximum Junction-to-Case (Drain) Steady State 2.1 2.6 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 C/W. g. Package limited. Document Number: 65471 www.vishay.com S10-0039-Rev. A, 11-Jan-10 1New Product SiR166DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 32 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.0 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.2 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0026 0.0032 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0032 0.0040 GS D a g V = 15 V, I = 15 A 75 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3340 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 635 pF oss DS GS C Reverse Transfer Capacitance 300 rss V = 15 V, V = 10 V, I = 20 A 51 77 DS GS D Q Total Gate Charge g 25 38 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 20 A 6.5 gs DS GS D Q Gate-Drain Charge 8.5 gd R Gate Resistance f = 1 MHz 0.3 1.5 3 g t Turn-On Delay Time 12 24 d(on) t Rise Time V = 15 V, R = 1.5 12 24 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 36 65 d(off) Fall Time t 918 f ns t Turn-On Delay Time 28 65 d(on) Rise Time t 21 40 V = 15 V, R = 1.5 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 44 80 d(off) Fall Time t 16 30 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 40 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.72 1.1 V SD S t Body Diode Reverse Recovery Time 27 54 ns rr Body Diode Reverse Recovery Charge Q 18 35 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 14 a ns Reverse Recovery Rise Time t 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65471 2 S10-0039-Rev. A, 11-Jan-10