New Product SiR401DP Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d Definition V (V) R () Max. Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.0032 at V = - 10 V - 50 GS 100% R and UIS Tested g - 20 0.0042 at V = - 4.5 V - 50 97 nC GS Compliant to RoHS Directive 2002/95/EC 0.0077 at V = - 2.5 V - 50 GS APPLICATIONS PowerPAK SO-8 Adaptor Switch Battery Switch S 6.15 mm 5.15 mm 1 S Load Switch 2 S 3 G S 4 D 8 D 7 G D 6 D 5 Bottom View P-Channel MOSFET Ordering Information: D SiR401DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 12 GS d T = 25 C - 50 C d T = 70 C - 50 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 29 A a, b T = 70 C - 23.5 A A I - 80 Pulsed Drain Current (t = 300 s) DM d T = 25 C - 35.5 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 4.5 A I Avalanche Current - 30 AS L = 0.1 mH E Single-Pulse Avalanche Energy 45 mJ AS T = 25 C 39 C T = 70 C 25 C Maximum Power Dissipation P W D a, b T = 25 C 5 A a, b T = 70 C 3.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 20 25 thJA C/W Maximum Junction-to-Case R 2.1 3.2 Steady State thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 70 C/W. d. Package limited. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 63661 www.vishay.com S12-0334-Rev. A, 13-Feb-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiR401DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 12 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.6 - 1.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 15 A 0.0025 0.0032 GS D a R V = - 4.5 V, I = - 12 A 0.0033 0.0042 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 10 A 0.0055 0.0077 GS D a g V = - 10 V, I = - 15 A 77 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 9080 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 1120 pF oss DS GS C Reverse Transfer Capacitance 1195 rss V = - 10 V, V = - 10 V, I = - 10 A 205 310 DS GS D Q Total Gate Charge g 97 146 nC Q V = - 10 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 15.4 gs DS GS D Q Gate-Drain Charge 25.6 gd R Gate Resistance f = 1 MHz 0.4 3 6 g t Turn-On Delay Time 14 28 d(on) t V = - 10 V, R = 1 Rise Time 13 26 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 175 300 d(off) D GEN g t Fall Time 41 80 f ns t Turn-On Delay Time 70 140 d(on) t V = - 10 V, R = 1 Rise Time 65 130 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 160 300 d(off) D GEN g t Fall Time 55 100 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 35.5 S C A Pulse Diode Forward Current I - 80 SM Body Diode Voltage V I = - 3 A, V = 0 - 0.67 - 1.1 V SD S GS Body Diode Reverse Recovery Time t 59 110 ns rr Body Diode Reverse Recovery Charge Q 48 95 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 25 a ns Reverse Recovery Rise Time t 34 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63661 2 S12-0334-Rev. A, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000