TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Peak wavelength: = 875 nm p High reliability Angle of half intensity: = 24 Low forward voltage Suitable for high pulse current operation 94 8389 Good spectral matching with Si photodetectors Compliant to RoHS Directive 200/95/EC and in accordance to WEEE 2002/96/EC Note DESCRIPTION ** Please see document Vishay Material Category Policy: The TSHA6500 is an infrared, 875 nm emitting diode in www.vishay.com/doc 99902 GaAlAs technology, molded in a clear, untinted plastic APPLICATIONS package. Infrared remote control and free air data transmission systems with comfortable radiation angle This emitter is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) tr (ns) e P TSHA6500 30 24 875 600 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHA6500 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 2.5 A p FSM Power dissipation P 180 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 230 K/W thJA Rev. 2.1, 24-Aug-11 Document Number: 81022 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSHA6500 www.vishay.com Vishay Semiconductors 200 120 180 100 160 140 80 120 R = 230 K/W thJA R = 230 K/W thJA 100 60 80 40 60 40 20 20 0 0 0 1020 3040506070 8090 100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21142 21143 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.5 1.8 V F p F Forward voltage I = 1 A, t = 100 s V 2.8 3.5 V F p F Temperature coefficient of V I = 100 mA TK - 1.6 mV/K F F VF Reverse current V = 5 V I 100 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 20 pF R j I = 100 mA, t = 20 ms I 16 30 48 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 128 240 mW/sr F p e Radiant power I = 100 mA, t = 20 ms e24 mW F p Temperature coefficient of I = 20 mA TK - 0.7 %/K e F e Angle of half intensity 24 deg Peak wavelength I = 100 mA 875 nm F p Spectral bandwidth I = 100 mA 80 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p I = 100 mA t 600 ns F r Rise time I = 1 A t 300 ns F r I = 100 mA t 600 ns F f Fall time I = 1 A t 300 ns F f Virtual source diameter d2.2 mm Rev. 2.1, 24-Aug-11 Document Number: 81022 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F