X-On Electronics has gained recognition as a prominent supplier of W29N01GZDIBA NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N01GZDIBA NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N01GZDIBA Winbond

Name: W29N01GZDIBA
Brand: Winbond
SKU: W29N01GZDIBA_Winbond
Availability: OutOfStock
Rating: 5 (11 reviews)

W29N01GZDIBA electronic component of Winbond

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Part No.	W29N01GZDIBA
Manufacturer:	Winbond
Category:	NAND Flash
Description:	NAND Flash 1G-bit NAND flash, 1.8V, 1-bit ECC, 3V, x8
Datasheet:	W29N01GZDIBA Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

W29N01GZDIBA More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 MOQ : 260 Multiples : 1	260 : USD 0		N/A

Specifications

Manufacturer Winbond Winbond
Product Category NAND Flash NAND Flash

We are delighted to provide the W29N01GZDIBA from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N01GZDIBA and other electronic components in the NAND Flash category and beyond.

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Additional Infomation About Product

W29N01GZ/W W29N01GZ/W 1G-BIT 1.8V NAND FLASH MEMORY th Release Date: January 11 , 2018 1 Revision J W29N01GZ/W Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 7 2. FEATURES ....................................................................................................................................... 7 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 8 3.1 Pin assignment 48 ball VFBGA X8/X16 ......................................................................... 8 3.2 Pin Descriptions .................................................................................................................... 9 4. PIN DESCRIPTIONS ...................................................................................................................... 10 4.1 Chip Enable ( CE) .............................................................................................................. 10 4.2 Write Enable ( WE) ............................................................................................................ 10 4.3 Read Enable ( RE) ............................................................................................................ 10 4.4 Address Latch Enable (ALE) .............................................................................................. 10 4.5 Command Latch Enable (CLE) .......................................................................................... 10 4.6 Write Protect ( WP) ............................................................................................................ 10 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 10 4.8 Input and Output (I/Ox) ....................................................................................................... 10 5. BLOCK DIAGRAM .......................................................................................................................... 11 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 12 6.1 X8 Array Organization ........................................................................................................ 12 6.2 X16 Array Organization ...................................................................................................... 13 7. MODE SELECTION TABLE ........................................................................................................... 14 8. COMMAND TABLE......................................................................................................................... 15 9. DEVICE OPERATIONS .................................................................................................................. 16 9.1 READ operation .................................................................................................................. 16 9.1.1 PAGE READ (00h-30h)......................................................................................................... 16 9.1.2 CACHE READ OPERATIONS .............................................................................................. 17 9.1.3 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 21 9.1.4 READ ID (90h) ...................................................................................................................... 22 9.1.5 READ PARAMETER PAGE (ECh) ....................................................................................... 23 9.1.6 READ STATUS (70h)............................................................................................................ 25 9.1.7 READ UNIQUE ID (EDh) ...................................................................................................... 27 9.2 PROGRAM operation ......................................................................................................... 28 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 28 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 28 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 29 9.2.4 CACHE PROGRAM (80h-15h) ............................................................................................. 29 9.3 COPY BACK operation....................................................................................................... 31 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 31 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 31 9.4 BLOCK ERASE operation .................................................................................................. 33 9.4.1 BLOCK ERASE (60h-D0h) .................................................................................................... 33 9.5 RESET operation ................................................................................................................ 34 9.5.1 RESET (FFh) ........................................................................................................................ 34 9.6 FEATURE OPERATION..................................................................................................... 35 th Release Date: January 11 , 2018 2 Revision J

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Winbond Elec may also be referenced as

WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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