C3M0040120J1 Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enchancement Mode Features Package TAB Drain 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Q ) rr Halogen free, RoHS compliant 1 2 3 4 5 6 7 G KS S S S S S Benefits Drain (TAB) Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Gate (Pin 1) Increase system switching frequency Driver Power Source Source (Pin 2) (Pin 3,4,5,6,7) Applications Datacenter and Telecom Power Supplies EV Battery Chargers Marking Part Number Package High voltage DC/DC converters Energy Storage Systems C3M0040120J1 TO-263-7L XL C3M0040120J1 Solar Inverters Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 1200 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1 V GSmax Gate - Source Voltage (static) -4/+15 V Static Note 2 V GSop 64 V = 15 V, T = 25C GS C Continuous Drain Current A Fig. 19 I D 42 VGS = 15 V, TC = 100C Pulsed Drain Current 100 A Pulse width t limited by T I jmax D(pulse) P P Power Dissipation 272 W T =25C, T = 150 C Fig. 20 C J D -40 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L Note (1): When using MOSFET Body Diode V = -4V/+19V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 2021 Wolfspeed, Inc. All rights reserved. Wolfspeed and the Wolfstreak logo are registered trademarks and the Rev. 0, October 2021 Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: C3M0040120J1 2 Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 1200 V (BR)DSS VGS = 0 V, ID = 100 A 1.8 2.7 3.6 V V = V , I = 9.2 mA DS GS D V Gate Threshold Voltage Fig. 11 GS(th) 2.2 V V = V , I = 9.2 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 50 A V = 1200 V, V = 0 V DSS DS GS IGSS Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GS DS 40 53.5 V = 15 V, I = 33.3 A GS D Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 60 VGS = 15 V, ID = 33.3 A, TJ = 150C 21 V = 20 V, I = 33.3 A DS DS g Transconductance S Fig. 7 fs 20 V = 20 V, I = 33.3 A, T = 150C DS DS J C Input Capacitance 2900 iss V = 0 V, V = 1000 V GS DS Fig. 17, C Output Capacitance 103 oss pF 18 f = 100 kHz C Reverse Transfer Capacitance 5 rss VAC = 25 mV E C Stored Energy 60 J Fig. 16 oss oss VDS = 800 V, VGS = -4 V/+15 V, E Turn-On Switching Energy (Body Diode FWD) 339 ON J Fig. 26 I = 33.3 A, D E Turn Off Switching Energy (Body Diode FWD) 67 OFF R = 2.5, L= 99 H, G(ext) t Turn-On Delay Time 13 d(on) V = 800 V, V = -4 V/15 V DD GS tr Rise Time 18 ns R = 2.5 , I = 33.3 A, L= 99 Fig. 27 G(ext) D t Turn-Off Delay Time 22 d(off) Timing relative to V , Inductive load DS tf Fall Time 8 , R Internal Gate Resistance 3.5 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 35 gs VDS = 800 V, VGS = -4 V/15 V Q Gate to Drain Charge 27 gd I = 33.3 A nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 94 2021 Wolfspeed, Inc. All rights reserved. Wolfspeed and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: