C3M0045065J1 Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package TAB Drain 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Q ) rr Halogen free, RoHS compliant 1 2 3 4 5 6 7 G KS S S S S S Benefits Drain (TAB) Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Gate (Pin 1) Increase system switching frequency Driver Power Source Source (Pin 2) (Pin 3,4,5,6,7) Applications Datacenter and Telecom Power Supplies EV Battery Chargers Marking Part Number Package High voltage DC/DC converters Energy Storage Systems C3M0045065J1 TO-263-7L XL C3M0045065J1 Solar Inverters Maximum Ratings (T =25C, unless otherwise specified) C Symbol Parameter Value Unit Note Drain - Source Voltage 650 V V DSmax Gate - Source voltage -8/+19 V Note 1 V GSmax Continuous Drain Current, V = 15 V, T = 25C 47 GS C I A Fig. 19 D Continuous Drain Current, V = 15 V, T = 100C 31 GS C I Pulsed Drain Current, Pulse width t limited by Tjmax 132 A D(pulse) P P Power Dissipation, T =25C, T = 150 C 147 W Fig. 20 C J D -40 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature, 1.6mm (0.063) from case for 10s 260 C T L Note (1): Recommended turn off / turn on gate voltage V - 4V...0V / +15V GS 2021 Wolfspeed, Inc. All rights reserved. Wolfspeed and the Wolfstreak logo are registered trademarks and the Rev. 0, October 2021 Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: 2 C3M0045065J1 Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 650 V VGS = 0 V, ID = 100 A 1.8 2.6 3.6 V VDS = VGS, ID = 4.84 mA V Gate Threshold Voltage Fig. 11 GS(th) 2.3 V V = V , I = 4.84 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 50 A V = 650 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 45 60 VGS = 15 V, ID = 17.6 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5,6 54 V = 15 V, I = 17.6 A, T = 150C GS D J 12 V = 20 V, I = 17.6 A DS DS g Transconductance S Fig. 7 fs 11 V = 20 V, I = 17.6 A, T = 150C DS DS J C Input Capacitance 1621 iss V = 0 V, V = 0V to 400 V GS DS Fig. 17, C Output Capacitance 101 oss F = 1 Mhz 18 VAC = 25 mV C Reverse Transfer Capacitance 8 rss pF C Effective Output Capacitance (Energy Related) 126 Note: 2 o(er) V = 0 V, V = 0V to 400 V GS DS C Effective Output Capacitance (Time Related) 178 Note: 2 o(tr) = 1 Mhz E C Stored Energy 10 J V = 400 V, F Fig. 16 oss oss DS VDS = 400 V, VGS = -4 V/15 V, I = 17.6 A, EON Turn-On Switching Energy (Body Diode) 36 D R = 2.5 , L= 99 H, TJ = 25C G(ext) J Fig. 25 E Turn Off Switching Energy (Body Diode) 7 OFF FWD = Internal Body Diode of MOSFET t Turn-On Delay Time 8 d(on) V = 400 V, V = -4 V/15 V DD GS t Rise Time 10 r I = 17.6 A, R = 2.5 , L= 99 H D G(ext) ns Fig. 26 Timing relative to V DS td(off) Turn-Off Delay Time 19 Inductive load tf Fall Time 6 , R Internal Gate Resistance 3 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 21 gs V = 400 V, V = -4 V/15 V DS GS Q Gate to Drain Charge 16 gd nC I = 17.6 A Fig. 12 D Per IEC60747-8-4 pg 21 Q Total Gate Charge 61 g Note (2): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V 2021 Wolfspeed, Inc. All rights reserved. Wolfspeed and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: