X-On Electronics has gained recognition as a prominent supplier of C3M0120065J SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. C3M0120065J SiC MOSFETs are a product manufactured by Wolfspeed. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

C3M0120065J Wolfspeed

C3M0120065J electronic component of Wolfspeed
C3M0120065J Wolfspeed
C3M0120065J SiC MOSFETs
C3M0120065J  Semiconductors

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See Product Specifications
Part No. C3M0120065J
Manufacturer: Wolfspeed
Category: SiC MOSFETs
Description: SiC MOSFETs SiC, MOSFET, 120mohm, 650V, TO-263-7, Industrial
Datasheet: C3M0120065J Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.304 ea
Line Total: USD 8.3 
Availability - 2477
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2477
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ : 1
Multiples : 1
1 : USD 8.304
10 : USD 5.39
250 : USD 5.379
5000 : USD 5.368

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Package / Case
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the C3M0120065J from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the C3M0120065J and other electronic components in the SiC MOSFETs category and beyond.

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V 650 V DS I 25C 21 A D C3M0120065J R 120 m DS(on) Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package TAB Drain rd 3 Generation SiC MOSFET technology Low inductance package with driver source pin 7mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Drain (TAB) 1 2 3 4 5 6 7 G KS S S S S S Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Gate Easy to parallel and simple to drive (Pin 1) Enable new hard switching PFC topologies (Totem-Pole) Driver Power Source Source (Pin 2) (Pin 3,4,5,6,7) Applications Solar inverters DC/DC converters Part Number Package Marking Switch Mode Power Supplies EV battery chargers C3M0120065J TO-263-7 C3M0120065J UPS Maximum Ratings Symbol Parameter Value Unit Note 650 V V Drain - Source Voltage, T = 25 C DSS C Gate - Source voltage (Under transient events < 100 ns) -8/+19 V Fig. 28 V GS Continuous Drain Current, V = 15 V, T = 25C 21 GS C A Fig. 19 I D Continuous Drain Current, VGS = 15 V, TC = 100C 15 Pulsed Drain Current, Pulse width t limited by T 51 A I jmax D(pulse) P Power Dissipation, T =25C, T = 175 C 86 W Fig. 20 P C J D -40 to Operating Junction and Storage Temperature C T , T J stg +175 Solder Temperature, 1.6mm (0.063) from case for 10s 260 C T L 1 C3M0120065J Rev. 1, 01-2021Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 650 V V = 0 V, I = 100 A (BR)DSS GS D V Gate-Source Recommended Turn-On Voltage 15 V GSon Static Fig. 29 V Gate-Source Recommended Turn-Off Voltage -4 V GSoff 1.8 2.3 3.6 V VDS = VGS, ID = 1.86 mA VGS(th) Gate Threshold Voltage Fig. 11 1.9 V VDS = VGS, ID = 1.86 mA, TJ = 175C IDSS Zero Gate Voltage Drain Current 1 50 A VDS = 650 V, VGS = 0 V I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 120 157 V = 15 V, I = 6.76 A GS D Fig. 4, R Drain-Source On-State Resistance m DS(on) 5,6 168 V = 15 V, I = 6.76 A, T = 175C GS D J 5.0 V = 20 V, I = 6.76 A DS DS gfs Transconductance S Fig. 7 4.9 VDS= 20 V, IDS= 6.76 A, TJ = 175C Ciss Input Capacitance 640 V = 0 V, V = 0V to 400 V GS DS Fig. 17, C Output Capacitance 45 oss F = 1 Mhz 18 C Reverse Transfer Capacitance 2.3 rss pF VAC = 25 mV Co(er) Effective Output Capacitance (Energy Related) 57 Note: 1 VGS = 0 V, VDS = 0V to 400 V Co(tr) Effective Output Capacitance (Time Related) 79 Note: 1 = 1 Mhz E C Stored Energy 4.3 J V = 400 V, F Fig. 16 oss oss DS V = 400 V, V = -4 V/15 V, I = 6.76 A, DS GS E Turn-On Switching Energy (Body Diode) 28 D ON R = 10 , L= 237 H, T = 175C J G(ext) J Fig. 25 E Turn Off Switching Energy (Body Diode) 6 OFF FWD = Internal Body Diode of MOSFET t Turn-On Delay Time 8 d(on) V = 400 V, V = -4 V/15 V DD GS t Rise Time 9 r I = 6.76 A, R = 10 D G(ext) ns Fig. 26 Timing relative to V DS t Turn-Off Delay Time 18 d(off) Inductive load t Fall Time 9 f , RG(int) Internal Gate Resistance 6 f = 1 MHz VAC = 25 mV Q Gate to Source Charge 8 gs VDS = 400 V, VGS = -4 V/15 V Q Gate to Drain Charge 7 gd nC I = 6.76 A Fig. 12 D Per IEC60747-8-4 pg 21 Q Total Gate Charge 26 g o(er) Note (1): C , a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V 2 C3M0120065J Rev. 1, 01-2021

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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