E3M0060065D Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Q ) rr Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Higher system efficiency Reduce cooling requirements 1 2 3 Increase power density Increase system switching frequency Applications EV Battery Chargers High Voltage DC/DC Converters Part Number Package Marking TO-247-3L E3M0060065D E3M0060065D Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Note Drain - Source Voltage 650 V V DSmax Gate - Source Voltage -8/+19 V Note: 1 V GSmax 37 T = 25C C Fig. 19 I A D Continuous Drain Current, V = 15 V GS Note: 2 26 T = 100C C 99 A Fig. 22 I Pulsed Drain Current, Pulse width t limited by T D(pulse) jmax P Fig. 20 P Power Dissipation, T =25C, T = 175 C 131 W C J D Note: 2 -40 to Operating Junction and Storage Temperature C T , T J stg +175 Solder Temperature, 1.6mm (0.063) from case for 10s 260 C T L 1 Nm M Mounting Torque , M3 or 6-32 screw d 8.8 lbf-in Note (1): Recommended turn off / turn on gate voltage V - 4V...0V / +15V GS Note (2): Verified by design Rev. 1, JUNE 2022 4600 Silicon Drive Durham, NC 27703 Tel: +1.919.313.5300 wolfspeed.com/power 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice.E3M0060065D 2 Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 650 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.8 3.6 V V = V , I = 3.6 mA DS GS D V Gate Threshold Voltage Fig. 11 GS(th) 2.2 V VDS = VGS, ID = 3.6 mA, TJ = 175C IDSS Zero Gate Voltage Drain Current 1 50 A VDS = 650 V, VGS = 0 V I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 60 79 V = 15 V, I = 13.2 A GS D Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 83 V = 15 V, I = 13.2 A, T = 175C GS D J 9 V = 20 V, I = 13.2 A DS DS g Transconductance S Fig. 7 fs 9 VDS= 20 V, I DS= 13.2 A, TJ = 175C C Input Capacitance 1170 iss Fig. 17, V = 0 V, V = 0V to 600 V GS DS Coss Output Capacitance 72 pF 18 F = 1 Mhz Crss Reverse Transfer Capacitance 6 VAC = 25 mV Eoss Coss Stored Energy 14 J Fig. 16 Co(er) Effective Output Capacitance (Energy Related) 85 pF VGS = 0 V, VDS = 0... 400V Note: 3 Co(tr) Effective Output Capacitance (Time Related) 122 pF VDS = 400 V, VGS = -4 V/15 V, I = 13.2A, D EON Turn-On Switching Energy (External Diode) 126 R = 2.5 , L= 135 H, TJ = 175C J G(ext) Fig. 26 EOFF Turn Off Switching Energy (External Diode) 25 FWD = External SiC DIODE VDS = 400 V, VGS = -4 V/15 V, I = 13.2A, D EON Turn-On Switching Energy (Body Diode FWD) 169 R = 2.5 , L= 135 H, TJ = 175C J G(ext) Fig. 26 EOFF Turn-Off Switching Energy (Body Diode FWD) 23 FWD = Internal Body Diode t Turn-On Delay Time d(on) 10 V = 400 V, V = -4 V/15 V DD GS t Rise Time r 33 I = 13.2 A, R = 2.5 , D G(ext) ns Fig. 27 Timing relative to V DS t Turn-Off Delay Time d(off) 17 Inductive load t Fall Time f 8 , RG(int) Internal Gate Resistance 4 f = 1 MHz VAC = 25 mV Q Gate to Source Charge gs 16 VDS = 400 V, VGS = -4 V/15 V I = 13.2 A Q Gate to Drain Charge nC D Fig. 12 gd 13 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 46 Note (3): C o(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V o(tr) C , a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V Rev. 1, JUNE 2022 4600 Silicon Drive Durham, NC 27703 Tel: +1.919.313.5300 wolfspeed.com/power 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice.