X-On Electronics has gained recognition as a prominent supplier of E3M0060065K SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. E3M0060065K SiC MOSFETs are a product manufactured by Wolfspeed. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

E3M0060065K Wolfspeed

E3M0060065K electronic component of Wolfspeed
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Part No.E3M0060065K
Manufacturer: Wolfspeed
Category: SiC MOSFETs
Description: SiC MOSFETs 650V, SiC MOSFET
Datasheet: E3M0060065K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 17.1585 ea
Line Total: USD 17.16

Availability - 343
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
205
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 16.238
10 : USD 14.467
30 : USD 14.3175
60 : USD 13.524
120 : USD 12.8685
270 : USD 12.4545
510 : USD 11.845
1020 : USD 11.3275
2520 : USD 10.879

   
Manufacturer
Product Category
Mounting Style
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Channel Mode
Package / Case
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We are delighted to provide the E3M0060065K from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the E3M0060065K and other electronic components in the SiC MOSFETs category and beyond.

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E3M0060065K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package 3rd generation SiC MOSFET technology Tab Drain Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Q ) rr Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Drain (Pin 1, TAB) Benefits Reduce switching losses and minimize gate ringing 1 2 3 4 Higher system efficiency Gate (Pin 4) Reduce cooling requirements Driver Power Increase power density Source Source (Pin 3) (Pin 2) Increase system switching frequency Applications Part Number Package Marking EV Battery Chargers E3M0060065K E3M0060065K High Voltage DC/DC Converters TO-247-4L Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Note Drain - Source Voltage 650 V V DSmax Gate - Source Voltage -8/+19 V Note: 1 V GSmax 37 T = 25C C Fig. 19 I A D Continuous Drain Current, V = 15 V GS Note: 2 26 T = 100C C 99 A Fig. 22 I Pulsed Drain Current, Pulse width t limited by T D(pulse) jmax P Fig. 20 P Power Dissipation, T =25C, T = 175 C 131 W C J D Note: 2 -40 to Operating Junction and Storage Temperature C T , T J stg +175 Solder Temperature, 1.6mm (0.063) from case for 10s 260 C T L 1 Nm M Mounting Torque , M3 or 6-32 screw d 8.8 lbf-in Note (1): Recommended turn off / turn on gate voltage V - 4V...0V / +15V GS Note (2): Verified by design Rev. 1, JUNE 2022 4600 Silicon Drive Durham, NC 27703 Tel: +1.919.313.5300 wolfspeed.com/power 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice.E3M0060065K 2 Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 650 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.8 3.6 V V = V , I = 3.6 mA DS GS D V Gate Threshold Voltage Fig. 11 GS(th) 2.2 V VDS = VGS, ID = 3.6 mA, TJ = 175C IDSS Zero Gate Voltage Drain Current 1 50 A VDS = 650 V, VGS = 0 V I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 60 79 V = 15 V, I = 13.2 A GS D Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 83 V = 15 V, I = 13.2 A, T = 175C GS D J 9 V = 20 V, I = 13.2 A DS DS g Transconductance S Fig. 7 fs 9 VDS= 20 V, I DS= 13.2 A, TJ = 175C C Input Capacitance 1170 iss Fig. 17, V = 0 V, V = 0V to 600 V GS DS Coss Output Capacitance 72 pF 18 F = 1 Mhz Crss Reverse Transfer Capacitance 6 VAC = 25 mV Eoss Coss Stored Energy 14 J Fig. 16 Co(er) Effective Output Capacitance (Energy Related) 85 pF VGS = 0 V, VDS = 0... 400V Note: 3 Co(tr) Effective Output Capacitance (Time Related) 122 pF VDS = 400 V, VGS = -4 V/15 V, I = 13.2A, D EON Turn-On Switching Energy (External Diode) 29 R = 2.5 , L= 135 H, TJ = 175C J G(ext) Fig. 25 EOFF Turn Off Switching Energy (External Diode) 12 FWD = External SiC DIODE VDS = 400 V, VGS = -4 V/15 V, I = 13.2A, D EON Turn-On Switching Energy (Body Diode FWD) 40 R = 2.5 , L= 135 H, TJ = 175C J G(ext) Fig. 25 EOFF Turn-Off Switching Energy (Body Diode FWD) 11 FWD = Internal Body Diode t Turn-On Delay Time 9 d(on) V = 400 V, V = -4 V/15 V DD GS t Rise Time 10 r I = 13.2 A, R = 2.5 , D G(ext) ns Fig. 26 Timing relative to V DS t Turn-Off Delay Time 16 d(off) Inductive load t Fall Time 8 f , RG(int) Internal Gate Resistance 4 f = 1 MHz VAC = 25 mV Qgs Gate to Source Charge 16 V = 400 V, V = -4 V/15 V DS GS Q Gate to Drain Charge 16 ID = 13.2 A gd nC Fig. 12 Per IEC60747-8-4 pg 21 Q Total Gate Charge 49 g Note (3): C o(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V Rev. 1, JUNE 2022 4600 Silicon Drive Durham, NC 27703 Tel: +1.919.313.5300 wolfspeed.com/power 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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