About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...116117118119120...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NGTG15N60S1EG


IGBT Transistors 15A 600V IGBT
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ON Semiconductor Availability : 0
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USD 0.5186
Multiples of: 1

 600 V1.95 V20 V30 A100 nA47 W TO - 220Tube Through Hole   Ngtg15n60s1
STGPL6NC60D


STMicroelectronics IGBT Transistors 600V 6A N-Channel
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STMicroelectronics Availability : 0
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USD 0.5193
Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 C600 - 650V Igbts
STGD6NC60H-1


IGBT Transistors N-channel 600 V, 7 A very fast IGBT
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STMicroelectronics Availability : 0
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USD 0.5193
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Single600 V1.9 V+/- 20 V15 A100 nA  IPAK - 3TubeSiThrough Hole62.5 W- 55 C+ 150 C600 - 650V Igbts
IRG4BC20SPBF


Transistor: IGBT; 600V; 19A; 60W; TO220AB
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Infineon Availability : 0
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USD 0.5301
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Single600 V1.6 V+/- 20 V19 A100 nA60 W TO - 220 - 3TubeSiThrough Hole60 W- 55 C+ 150 C 
IRG4BC10KPBF


IGBT Transistors 600V UltraFast 8-25kHz
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Infineon Availability : 0
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USD 0.5352
Multiples of: 1

Single600 V2.62 V+/- 20 V9 A   TO - 220 - 3Tube Through Hole38 W- 55 C  
STGF6M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
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STMicroelectronics Availability : 0
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USD 0.5424
Multiples of: 1

Single650 V1.55 V+/- 20 V12 A+/- 250 uA  TO - 220FP - 3  Through Hole24.2 W- 55 C+ 175 C 
IGP30N65F5XKSA1


IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon Availability : 0
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USD 0.5492
Multiples of: 1

Single650 V1.9 V20 V55 A100 nA  TO - 220 - 3TubeSiThrough Hole188 W- 40 C+ 175 CXgp30n65
NGTB10N60R2DT4G


ON Semiconductor IGBT Transistors RC2 IGBT 10A 600V DPAK
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ON Semiconductor Availability : 0
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USD 0.5695
Multiples of: 1

Single600 V1.7 V+/- 20 V20 A+/- 100 nA  DPAK - 3ReelSiSmd/Smt72 W + 175 C 
STGPL6NC60DI


STMicroelectronics IGBT Transistors 600 V - 6 A Hyper fast IGBT
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STMicroelectronics Availability : 0
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USD 0.5704
Multiples of: 1

 600 V1.9 V20 V14 A100 nA56 W TO - 220TubeSiThrough Hole56 W  Stgpl6nc60di
NGD8205ANT4G


IGBT Transistors 350V 20A IGBT N-CHANNEL
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Littelfuse Availability : 0
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USD 0.5723
Multiples of: 9

 390 V 15 V20 A   DPAKCut TapeSiThrough Hole125 W- 55 C+ 175 CNgd8205a
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