About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Image  Information Image Stock Code(▲▼)Description
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Global Stock ⓘ (▲▼)Price(USD

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG4PSC71KPBF


Transistor: IGBT; 600V; 85A; 350W; SUPER247
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Infineon Availability : 0
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USD 5.9538

Multiples of: 1

Single600 V2.3 V+/- 20 V85 A 350 W TO - 274AATubeSiThrough Hole350 W- 55 C  
IXYH40N65C3H1


IGBT Transistors 650V/80A XPT Copacked TO-247
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IXYS Availability : 0
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USD 5.9548

Multiples of: 1

Single650 V1.85 V30 V80 A100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 175 CIxyh40n65
STGW25S120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 5.9652

Multiples of: 1

Single1.2 kV1.6 V+/- 20 V50 A250 nA  TO 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
IXGH17N100U1


IGBT Transistors 17 Amps 1000V
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IXYS Availability : 0
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USD 5.967

Multiples of: 1

Single1000 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxgh17n100
IRG4BC40U


IGBTs 600V 40A TO-220 (TO-220-3) RoHS
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Infineon Availability : 0
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USD 5.9782

Multiples of: 1

         Tube - Packed      
GT50J325


IGBT, 600V, TO-3P(LH)
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Toshiba Availability : 0
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USD 5.9783

Multiples of: 1

                
HGTP10N120BN


IGBT Transistors 35A 1200V N-Ch
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ON Semiconductor Availability : 0
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USD 5.9882

Multiples of: 1

Single1200 V2.45 V+/- 20 V35 A+/- 250 nA298 W TO - 220 - 3Tube Through Hole - 55 C+ 150 CHgtp10n120
IXXH80N65B4H1


IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
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IXYS Availability : 0
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USD 6.0244

Multiples of: 10

Single650 V1.65 V20 V160 A100 nA  TO - 247AD - 3TubeSiThrough Hole625 W- 55 C+ 175 CIxxh80n65
IRGP4266D-EPBF


International Rectifier IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
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Infineon Availability : 0
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USD 6.0264

Multiples of: 1

Single650 V1.7 V20 V140 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 40 C+ 175 C 
IRG7PH46U-EP


IGBT Transistors IGBT DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 6.0556

Multiples of: 70

Single1.2 kV2.1 V+/- 30 V130 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole469 W- 55 C+ 175 C 
AUIRGP50B60PD1


International Rectifier IGBT Transistors 600V AUTO WARP2 150KHZ COPACK IGBT
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Infineon Availability : 0
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USD 6.0619

Multiples of: 1

Single600 V2.35 V+/- 20 V75 A 390 WAec - Q101TO - 247TubeSiThrough Hole390 W- 55 C  
IRG7PH46UD-EP


International Rectifier IGBT Transistors
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Infineon Availability : 0
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USD 6.0905

Multiples of: 25

 1.2 kV2 V 108 A   TO - 247 - 3TubeSiThrough Hole390 W   
IRGP4790D-EPBF


IGBT Transistors IGBT DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 6.0947

Multiples of: 1

Single650 V1.7 V+/- 20 V140 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 40 C+ 175 CTrenchstop
SGP15N120XKSA1


Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-220AB
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Infineon Availability : 0
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USD 6.1802

Multiples of: 1

         Tube      
RJH65D27BDPQ-A0#T2


IGBT Transistors IGBT - 650V/50A/TO-247A
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Renesas Availability : 0
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USD 6.2165

Multiples of: 1

Single650 V1.3 V+/- 30 V100 A+/- 1 uA  TO - 247A - 3TubeSiThrough Hole375 W- 55 C+ 175 CRjh65d27bdpq
IRG8P40N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 6.2419

Multiples of: 1

Single1200 V1.7 V30 V60 A200 nA305 W TO - 247AC - 3TubeSiThrough Hole305 W- 40 C+ 150 C 
APT25GN120BG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip Availability : 0
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USD 6.2424

Multiples of: 1

      272 W   Field Stop     
IRG7PH42UD1PBF


IGBT Transistors 1200V 85A
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Infineon Availability : 0
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USD 6.282

Multiples of: 25

Single1.2 kV2 V+/- 30 V85 A   TO - 247 - 3TubeSiThrough Hole313 W- 55 C  
GT50J325(Q)


Trans IGBT Chip N-CH 600V 50A 3-Pin(3+Tab) TO-3P(LH)
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Toshiba Availability : 0
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USD 6.3016

Multiples of: 4

Single               
IXYH10N170C


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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IXYS Availability : 0
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USD 6.3069

Multiples of: 1

Single       TO - 247 - 3Tube Through Hole280 W- 55 C+ 175 C 
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