About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Global Stock ⓘ (▲▼)Price(USD

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FSBF3CH60B


IGBT Transistors Smart Power Module
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ON Semiconductor Availability : 0
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USD 12.4307

Multiples of: 34

         Tube   - 40 C+ 150 CFsbf3ch60
IXXX100N60B3H1


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 0
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USD 12.433

Multiples of: 1

        TO - 247 - 3TubeSiThrough Hole    
APT70GR120L


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 12.4614

Multiples of: 1

      961 W   NPT, POWER MOS 8®     
IXYH100N65A3


Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-247AD
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IXYS Availability : 0
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USD 12.4999

Multiples of: 1

Single       TO - 247 - 3Tube Through Hole470 W- 55 C+ 175 C 
IXGH90N60B3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 90A
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IXYS Availability : 0
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USD 12.5191

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      660 W   GenX3     
IXGT16N170A


IGBT Transistors 32 Amps 1700 V 5 V Rds
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IXYS Availability : 0
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USD 12.5651

Multiples of: 1

Single1.7 kV4.2 V20 V16 A100 nA  TO - 268 - 3TubeSiSmd/Smt190 W- 55 C+ 150 CIxgt16n170
IXGH32N170A


IGBT Transistors VRY HI VOLT NPT IGBT 1700V, 72A
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IXYS Availability : 0
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USD 12.6827

Multiples of: 30

Single1.7 kV4 V20 V32 A100 nA  TO - 247AD - 3TubeSiThrough Hole350 W- 55 C+ 150 CIxgh32n170
FGL60N100BNTDTU


IGBT Transistors HIGH_POWER
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ON Semiconductor Availability : 0
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USD 12.8169

Multiples of: 1

Single1000 V1.5 V+/- 25 V60 A+/- 500 nA180 W TO - 264 - 3TubeSiThrough Hole180 W- 55 C+ 150 CFgl60n100bntdtu
APT30GT60BRDG


IGBT Transistors FG IGBT-COMBI 600V 30A TO-247 RoHS
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Microchip Availability : 0
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USD 12.8869

Multiples of: 1

         Tube      
IRG7PSH73K10PBF


IGBT Transistors 1200V 220A SUPER-247
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Infineon Availability : 0
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USD 12.9335

Multiples of: 25

Single1.2 kV2 V+/- 30 V220 A 1.15 kW TO - 274AATube Through Hole - 55 C  
APT68GA60B2D40


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip Availability : 0
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USD 12.9451

Multiples of: 1

      520 W   POWER MOS 8®, PT     
IXGA30N60C3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
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IXYS Availability : 0
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USD 12.9591

Multiples of: 1

 600 V2.6 V+/- 20 V60 A100 nA  TO - 263 - 3TubeSicSmd/Smt220 W- 55 C+ 150 CIxga30n60
IXXX110N65B4H1


IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
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IXYS Availability : 0
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USD 13.034

Multiples of: 1

Single650 V1.75 V20 V240 A100 nA  PLUS 247 - 3TubeSiThrough Hole880 W- 55 C+ 175 CIxxx110n65
APT64GA90LD30


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip Availability : 0
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USD 13.1331

Multiples of: 1

Single900 V2.5 V30 V117 A100 nA  TO - 264 - 3TubeSiThrough Hole500 W- 55 C+ 150 C 
IXGT16N170AH1


IGBT Transistors 11 Amps 1700V 5 Rds
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IXYS Availability : 0
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USD 13.2679

Multiples of: 1

  5 V     TO - 268 - 3TubeSiSmd/Smt   Ixgt16n170
APT64GA90B2D30


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip Availability : 0
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USD 13.3632

Multiples of: 1

      500 W   POWER MOS 8®, PT     
IRGPS60B120KDP


Transistor: IGBT; 1200V; 120A; 595W; SUPER247
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Infineon Availability : 0
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USD 13.4749

Multiples of: 1

Single1.2 kV2.75 V+/- 20 V120 A100 nA595 W TO - 274AATubeSiThrough Hole595 W- 55 C+ 150 C 
APT50GP60BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 0
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USD 13.5

Multiples of: 1

      625 W   POWER MOS 7®, PT     
IXYK100N65B3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-264(3)
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IXYS Availability : 0
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USD 13.559

Multiples of: 1

Single650 V1.53 V20 V225 A100 nA  TO - 264 - 3 SiThrough Hole830 W- 55 C+ 175 C 
IXGX120N60B


IGBT Transistors 76 Amps 600V 2.1 Rds
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IXYS Availability : 0
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USD 13.5837

Multiples of: 1

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