About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGS4B60KD1TRLP


IGBT Transistors 600V 10A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 1.1006
Multiples of: 1

Single600 V2.1 V+/- 20 V11 A100 nA63 W D2PAKReelSiSmd/Smt63 W- 55 C+ 175 CRc
AOT10B65M2


Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
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Alpha & Omega Availability : 0
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USD 1.106
Multiples of: 1

  1.6 V   75 W         
FGB5N60UNDF


IGBT Transistors 600V 5A NPT IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 1.1099
Multiples of: 391

Single600 V2.4 V+/- 20 V10 A+/- 10 nA73.5 W TO - 263AB (D2 PAK)TubeSiSmd/Smt73.5 W- 55 C+ 150 CFgb5n60undf
STGB25N40LZAG


IGBT Transistors Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 1.112
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 400 V1.25 V16 V25 A625 uA Aec - Q101D2PAK - 3  Smd/Smt150 W- 55 C+ 175 CStgb25n40lzag
AOTF15B65M3


Transistor: IGBT; 650V; 15A; 12W; TO220F; Eoff: 0.19mJ; Eon: 0.28mJ
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Alpha & Omega Availability : 0
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USD 1.12
Multiples of: 1

  1.95 V   12 W         
AOTF15B60D2


Transistor: IGBT; 600V; 15A; 16.7W; TO220F; Eoff: 0.07mJ; Eon: 0.26mJ
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Alpha & Omega Availability : 0
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USD 1.12
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  1.53 V   16.7 W         
SGT20N60FD1PN


IGBTs TO-3P RoHS
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Silan Availability : 0
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USD 1.1253
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IRGS6B60KPBF


International Rectifier IGBT Transistors 600V ULTRAFAST 10-30 KHZ IGBT
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Infineon Availability : 0
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USD 1.1325
Multiples of: 1

Single600 V1.8 V+/- 20 V13 A100 nA  D - PAK - 3TubeSiSmd/Smt90 W- 55 C+ 150 CRc
LGB15N41ATI


Littelfuse IGBT DISCRETE
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Littelfuse Availability : 0
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USD 1.134
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      107 W         
IRG4BC30KPBF


IGBT Transistors 600V UltraFast 8-25kHz
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Infineon Availability : 0
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USD 1.1344
Multiples of: 50

Single600 V2.7 V+/- 20 V28 A 100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C  
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