About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW50N65EH5XKSA1


IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 157
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USD 3.8069
Multiples of: 1

Single650 V1.65 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole275 W- 40 C+ 175 CTrenchstop 5 H5
IXYX110N120B4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
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IXYS Availability : 156
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USD 14.7618
Multiples of: 1

Single1200 V - 30 V , + 30 V340 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 4
IKP08N65F5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 155
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USD 0.9097
Multiples of: 1

Single650 V1.9 V20 V18 A100 nA  TO - 220 - 3TubeSiThrough Hole70 W- 40 C+ 175 CTrenchstop 5 F5
STGP20NC60V


STMicroelectronics IGBT Transistors N-Ch 600 Volt 30 Amp
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STMicroelectronics Availability : 155
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USD 2.3582
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Single600 V2.5 V+/- 20 V60 A+/- 100 nA  TO - 220 - 3TubeSiThrough Hole200 W- 55 C+ 150 C600 - 650V Igbts
IKW25T120


IGBT Transistors LOW LOSS DuoPack 1200V 25A
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Infineon Availability : 155
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USD 4.1032
Multiples of: 1

Single1200 V1.7 V+/- 20 V50 A600 nA  TO - 247 - 3TubeSiThrough Hole190 W- 40 C+ 150 CIkw25t120
VS-GP250SA60S


IGBT Module PT, Trench Single 600 V 380 A 893 W Chassis Mount SOT-227
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Vishay Availability : 155
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USD 26.0705
Multiples of: 1

Single600 V-20 V380 A+/- 350 nA  SOT - 227 SiChassis893 W- 40 C+ 150 C 
APT50GN120L2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip Availability : 152
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USD 16.652
Multiples of: 1

Single1.2 kV1.7 V30 V134 A600 nA  TO - 264 - 3TubeSiThrough Hole543 W- 55 C+ 150 C 
CRG60T60AK3HD


TO-247 IGBTs ROHS
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CRMICRO Availability : 150
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USD 1.3486
Multiples of: 1

                
STGF15M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
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STMicroelectronics Availability : 145
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USD 0.7865
Multiples of: 1

Single650 V1.55 V+/- 20 V30 A+/- 250 uA  TO - 220FP - 3 SiThrough Hole31 W- 55 C+ 175 CStgf15m65df2
STGB19NC60KDT4


STMicroelectronics IGBT Transistors 20 A - 600 V - short circuit rugged IGBT
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STMicroelectronics Availability : 145
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USD 1.0991
Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb19nc60kd
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