About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGW15T120


Transistor: IGBT; 1200V; 15A; 110W; TO247-3
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Infineon Availability : 58
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USD 1.9875

Multiples of: 1

      110 W         
STGW25H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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STMicroelectronics Availability : 58
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USD 3.9917

Multiples of: 1

Single1200 V2.1 V20 V50 A250 nA375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CStgw25h120df2
STGW40V60DLF


STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT
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STMicroelectronics Availability : 58
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USD 4.7352

Multiples of: 1

Single600 V2.35 V20 V80 A250 nA  TO - 247TubeSiThrough Hole283 W- 55 C+ 175 C600 - 650V Igbts
APT40GR120B2D30


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 58
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USD 9.7412

Multiples of: 1

Single1.2 kV2.5 V30 V88 A250 nA  TO - 247 - 3TubeSiThrough Hole500 W- 55 C+ 150 C 
APT50GT120LRDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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Microchip Availability : 58
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USD 19.3839

Multiples of: 1

      694 W   NPT     
IXBH42N170A


IGBT Transistors BIMOSET 42A 1700V
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IXYS Availability : 58
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USD 27.2278

Multiples of: 1

Single1700 V5.2 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh42n170
SG40T120UDB2


Transistor: IGBT; 1.2kV; 40A; 280W; TO247AD
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Sirectifier Availability : 57
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USD 3.2459

Multiples of: 1

      280 W         
IKW75N65EH5


TO-247-3 IGBTs ROHS
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Infineon Availability : 56
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USD 2.9875

Multiples of: 1

          si     
FGHL40T65MQDT


IGBT Transistors FS4 MID SPEED IGBT 650V 40A TO247-3L WITH FULL RATED CURRENT DIODE
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ON Semiconductor Availability : 56
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USD 3.15

Multiples of: 1

                
IXYH8N250CHV


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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IXYS Availability : 56
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USD 23.7002

Multiples of: 1

Single       TO - 247HV - 3Tube Through Hole280 W- 55 C+ 175 C 
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