About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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IXGH28N120B


IGBT Transistors 28 Amps 1200V 3.50 Rds
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IXYS Availability : 53
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USD 3.3569

Multiples of: 1

Single1200 V 20 V    TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
IXGH10N170A


IGBT Transistors 20 Amps 1700 V 7 V Rds
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IXYS Availability : 52
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USD 7.2429

Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh10n170
IXA30RG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS Availability : 51
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USD 10.0461

Multiples of: 1

          Si    Ixa30rg1200dhglb
APT80GA90B


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
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Microchip Availability : 51
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USD 10.58

Multiples of: 1

      625 W   POWER MOS 8®, PT     
IXBH2N250


IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-247AD
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IXYS Availability : 51
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USD 14.8075

Multiples of: 1

                
DG20X06T1


Transistor: IGBT; 600V; 29A; 313W; TO220
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STARPOWER Availability : 50
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USD 1.652

Multiples of: 1

      313 W         
STGWA40H120DF2


IGBT Transistors IGBT & Power Bipolar
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STMicroelectronics Availability : 50
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USD 3.275

Multiples of: 1

Single1.2 kV2.5 V20 V80 A250 nA  TO - 247 - 3  Through Hole468 W- 55 C+ 175 C900 - 1300V Igbts
APT36GA60SD15


IGBT Transistors FG, IGBT-COMBI, 600V, TO-268
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 50
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USD 8.4809

Multiples of: 1

      290 W   POWER MOS 8®, PT     
IRGP4062DPBF


IGBT Transistors 600V UltraFast Trench IGBT
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Infineon Availability : 49
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USD 1.4164

Multiples of: 1

Single600 V1.95 V+/- 20 V48 A 250 W TO - 247TubeSiThrough Hole250 W- 55 C  
IXYK110N120C4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
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IXYS Availability : 49
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USD 16.7875

Multiples of: 1

Single1200 V - 30 V , + 30 V310 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 8
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