About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...8687888990...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWA75H65DFB2


IGBT Transistors Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 538
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USD 3.705
Multiples of: 1

                
IKA06N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 6.2A
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Infineon Availability : 26
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USD 0.7624
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Single600 V1.5 V+/- 20 V10 A100 nA  TO - 220 - 3 FPTubeSiThrough Hole28 W- 40 C+ 150 CIka06n60
SPT15N65T1


TO-220MF IGBTs ROHS
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SPTECH Availability : 26
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USD 0.8686
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IKW40N65WR5


IGBTs Trench 650V 80A TO-247 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 26
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USD 2.6625
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APT40GP60B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 26
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USD 15.95
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      543 W   POWER MOS 7®, PT     
SL40T65FL1


TO-247 IGBTs ROHS
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SLKORMICRO Availability : 25
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USD 1.2713
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RGTVX6TS65DGC13(RGTVX6TS65DGC11)


- IGBTs ROHS
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ROHM Availability : 25
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USD 3.9547
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BGH50N65ZF1


Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
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BASiC Semiconductor Availability : 25
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USD 9.774
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      357 W   Trench, Field Stop, SiC SBD     
APT35GP120B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 25
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USD 74.191
Multiples of: 1

      543 W   POWER MOS 7®, PT     
STGF10NC60KD


IGBT Transistors PowerMESH" IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 24
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USD 0.8553
Multiples of: 1

Single600 V2 V+/- 20 V 100 nA25 W TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 CStgf10nc60kd
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