About MOSFETs

On Semiconductor MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFS4C310NT1G


MOSFET TRENCH 30V NCH
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USD 0.2599

Multiples of: 1500

51 A30 V5 mOhmsN - Channel 1.3 V- 55 C+ 175 C32 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V18.6 nCEnhancement  
RFD14N05L


MOSFET TO-251AA N-Ch Power
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USD 0.2604

Multiples of: 1

14 A50 V100 mOhmsn - channel  - 55 C+ 175 C48 Wthrough holeTO - 251 - 3Tubesi1 channel10 V enhancement  
NTLUS4C12NTAG


MOSFET COMP UDFN6 30V 10.7A 9MOH
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USD 0.2608

Multiples of: 3000

         Smd/SmtUDFN - 6Cut TapeSi      
NVD5490NLT4G-VF01


MOSFET NFET DPAK 60V 17A 64MOHM
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USD 0.261

Multiples of: 2500

         Smd/SmtTO - 252 - 3Cut TapeSi    Aec - Q101 
FDMA008P20LZ


MOSFET CSP
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USD 0.2612

Multiples of: 3000

         Smd/SmtPQFN - 6Cut TapeSi      
NTLUS030N03CTAG


MOSFET T6 30V NCH 1.6X1.6 UDFN
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USD 0.2618

Multiples of: 1

6.9 A30 V18 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.49 WSmd/SmtUDFN - 6Cut Tape 1 Channel20 V8 nCEnhancement  
SFT1443-TL-H


ON Semiconductor MOSFET NCH 4V DRIVE SERIES
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USD 0.2618

Multiples of: 1

9 A100 V225 mOhmsn - channel     smd/smtTO - 252 - 3Reelsi1 channel     
NTMFS4841NT1G


N-Channel 30 V 8.3A (Ta), 57A (Tc) 870mW (Ta), 41.7W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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USD 0.2619

Multiples of: 1500

13.1 A30 V7 mOhmsn - channel20 V - 55 C+ 150 C5 Wsmd/smtSO - 8FLReelsi1 channel20 V enhancement  
FDFMA2P029Z


MOSFET -20V P-Channel PT MFET_SCHOTTKY
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USD 0.2619

Multiples of: 3000

3.1 A20 V95 mOhmsp - channel  - 55 C+ 150 C1.4 Wsmd/smtMICRO - FET 2X2Reelsi1 channel- 20 V enhancement powertrench
2SK2951-TD-E


Trans MOSFET N-CH Si 200V 1A 4-Pin(3+Tab) Case PCP
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USD 0.2623

Multiples of: 1000

                enhancement  
FDZ663P


MOSFET PCh 1.5 V SPECIFIED PowerTrench MOSFET
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by Thu. 12 Sep
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USD 0.2647

Multiples of: 5000

2.7 A20 V134 mOhmsp - channel  - 55 C+ 150 C1.3 Wsmd/smtWLCSPReelsi 8 V   powertrench
NDS351N


Fairchild Semiconductor MOSFET NChannel Logic Level Enhancement Mode FET
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USD 0.2649

Multiples of: 1

1.1 A30 V250 mOhmsn - channel20 V - 55 C+ 150 C500 mWsmd/smtSSOT - 3Reelsi1 channel20 V enhancement  
NTD5865NL-1G


MOSFET Single N-CH 60V 40A
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USD 0.2656

Multiples of: 1

40 A60 V16 mOhmsn - channel 1 v to 2 V- 55 C+ 150 C52 Wthrough holeDPAK - 3    29 nC   
NTD5865N-1G


MOSFET Single N-CH 60V 38A
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USD 0.2656

Multiples of: 1

38 A60 V14 mOhmsn - channel 2 v to 4 V- 55 C+ 150 C52 Wthrough holeIPAK - 3    23 nC   
NDF05N50ZH


MOSFET NFET 500V 5A 1.2
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USD 0.2661

Multiples of: 1

5.5 A500 V1.5 Ohmsn - channel 3.9 V- 55 C+ 150 C30 Wthrough holeTO - 220 - 3 FPTubesi1 channel30 V18.5 nC   
NTLUS3A40PZCTAG


Trans MOSFET P-CH 20V 6.4A 6-Pin UDFN EP T/R
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USD 0.2666

Multiples of: 1394

           Tape And Reel    enhancement  
2SK3850-E


Trans MOSFET N-CH Si 600V 0.7A 3-Pin(3+Tab) TP
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USD 0.2668

Multiples of: 1

                   
NTNS3A91PZT5G


ON Semiconductor MOSFET NFET XLLGA3 20V 2A 1.6OHM
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USD 0.2678

Multiples of: 1620

- 223 mA- 20 V1.6 Ohmsp - channel     smd/smtXLLGA - 3Reelsi      
NTMFS4939NT3G


MOSFET NFET SO8FL 30V
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USD 0.2683

Multiples of: 5000

53 A30 V8 mOhmsn - channel  - 55 C+ 150 C2.58 Wsmd/smtSO - 8FLReelsi1 channel20 V    
FDMA7628


MOSFET Snlg PT4, N 20/8V in MLP 2.05x2.05
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USD 0.2698

Multiples of: 1

9.4 A20 V32.3 mOhmsn - channel 600 mV- 55 C+ 150 C1.9 Wsmd/smtMICRO - FET - 6Cut Tapesi1 channel1.5 V17.5 nC  powertrench
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