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On Semiconductor MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDD9411-F085


MOSFET 40V 15A DPAK N-Chnl PowerTrench
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USD 0.4234

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15 A40 V14 mOhmsN - Channel 2 V- 55 C+ 175 C600 WThrough HoleTO - 247 - 3Cut TapeSi1 Channel20 V15 nCEnhancement Powertrench
SVD5806NT4G


MOSFET NFET DPAK 40V 33A 19MOHM
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USD 0.4235

Multiples of: 1

           Cut TapeSi    Aec - Q101 
FDS8928A


Transistor: N/P-MOSFET; unipolar; 30/-20V; 5.5/4A; 2W; SO8
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USD 0.4238

Multiples of: 26

            powertrench®      
NVMYS025N06CLTWG


MOSFET N-Channel 60V 21A 4-Pin LFPAK T/R
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USD 0.4261

Multiples of: 3000

21 A60 V27.5 mOhmsN - Channel 2 V- 55 C+ 175 C3.8 WSmd/SmtLFPAK - 4Cut TapeSi1 Channel20 V5.8 nCEnhancementAec - Q101 
NTLJS3D0N02P8ZTAG


MOSFET PT8 20V WDFN POWER CLIP
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USD 0.4274

Multiples of: 1

           Cut Tape       
NVMFD5C674NLWFT1G


MOSFET T6 60V LL S08FL DS
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USD 0.4284

Multiples of: 1500

42 A60 V11.7 mOhmsN - Channel 1.2 V- 55 C+ 175 C37 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V10 nCEnhancementAec - Q101 
NVMYS014N06CLTWG


MOSFET 60V 14.5Ohm 42A Single N-Channel
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USD 0.4285

Multiples of: 1

36 A60 V15 mOhmsN - Channel 2 V- 55 C+ 175 C37 WSMD/SMTLFPAK - 4Cut Tape , ReelSi1 Channel- 20 V , + 20 V9.7 nCEnhancementAEC - Q101 
NVMFS5C646NLAFT1G


60V 93A 3.8mO@10V,50A 79W N Channel DFN-5(5.9x4.9) MOSFETs ROHS
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USD 0.429

Multiples of: 1500

93 A60 V3.8 mOhmsN - Channel 1.2 V- 55 C+ 175 C79 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel10 V33.7 nCEnhancementAec - Q100 
NVD3055-094T4G


ON Semiconductor MOSFET NFET DPAK 60V .094R TR
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USD 0.429

Multiples of: 2500

12 A60 V94 mOhmsn - channel     smd/smtDPAK - 3Reelsi1 channel   aec - q101 
NVMFD5489NLT1G


MOSFET Pwr MOSFET 60V 12A 65mOhm Dual N-CH
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USD 0.4291

Multiples of: 866

12 A60 V65 mOhmsn - channel     smd/smtDFN - 8Reelsi2 channel   aec - q101 
NVMFS5C645NLAFT1G


MOSFET T6 60V SO8FL
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USD 0.4304

Multiples of: 1

100 A60 V3.3 mOhmsN - Channel 1.2 V- 55 C+ 175 C79 WSmd/SmtDFN - 5Cut TapeSi1 Channel10 V34 nCEnhancementAec - Q101 
FQP13N10L


N-Channel 100 V 12.8A (Tc) 65W (Tc) Through Hole TO-220-3
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USD 0.4308

Multiples of: 1000

   n - channel  - 55 C+ 175 C through holeTO - 220 - 3Tube       
FQP7N20


Fairchild Semiconductor MOSFET 200V N-Channel QFET
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USD 0.4308

Multiples of: 1000

6.6 A200 V690 mOhmsn - channel  - 55 C+ 150 C63 Wthrough holeTO - 220 - 3Tube  30 V enhancement  
SFP9530


MOSFET PCh100V1.5a .3Ohm
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USD 0.4309

Multiples of: 1

- 10.5 A- 100 V300 mOhmsP - Channel30 V - 55 C+ 175 C66 WThrough HoleTO - 220 - 3Tube    Enhancement  
NTHS5441T1G


MOSFET -20V -5.3A P-Channel
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USD 0.4317

Multiples of: 1

5.3 A20 V46 mOhmsp - channel  - 55 C+ 150 C1.3 Wsmd/smtCHIP - FET - 8Reelsi1 channel12 V enhancement  
FDWS9511L-F085


MOSFET PT8P 40V LL PQFN56
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USD 0.4325

Multiples of: 3000

30 A40 V20.5 mOhmsP - Channel 3 V- 55 C+ 175 C68.2 WSmd/SmtDFN - 8Cut TapeSi1 Channel20 V18 nCEnhancementAec - Q101 
FDD4685-F085P


MOSFET 40V, P-channel Power Trench
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USD 0.4328

Multiples of: 1

32 A40 V23 mOhmsP - Channel 3 V- 55 C+ 175 C83 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V27 nCEnhancement  
NTMS4176PR2G


Trans MOSFET P-CH 30V 7.3A 8-Pin SOIC N T/R
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USD 0.4329

Multiples of: 2500

           Tape And Reel    enhancement  
FQD12P10TM_F085


Fairchild Semiconductor MOSFET P-CH100VQ-FET
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USD 0.4329

Multiples of: 2500

- 9.4 A- 100 V290 mOhmsp - channel     smd/smtD2PAK - 3Reelsi1 channel     
FDZ3N513ZT


MOSFET 30V Integrated NMOS and Shottky Diode
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USD 0.433

Multiples of: 1034

1.1 A30 V462 mOhmsn - channel 700 mV- 55 C+ 125 C1 Wsmd/smtWLCSPReelsi1 channel5.5 V1 nC   
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