About MOSFETs

On Semiconductor MOSFETs

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  Id - Continuous Drain Current
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMD8280


Fairchild Semiconductor MOSFET
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USD 1.4882

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40 A80 V8.2 mOhmsn - channel20 V3 V- 55 C+ 150 C38 Wsmd/smtDFN - 12 EPReelsi2 channel20 V enhancement power clip
FDP7N60NZ


MOSFET 600V N-Chan MOSFET UniFET-II
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USD 1.4891

Multiples of: 1

   n - channel     through holeTO - 220Tube       
FQB55N10


MOSFET QF 100V 26MOHM D2PAK
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USD 1.493

Multiples of: 1

   N Channel               
FQA16N50_F109


Fairchild Semiconductor MOSFET 500v QFET
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USD 1.495

Multiples of: 1

16 A500 V320 mOhmsn - channel     through holeTO - 3P - 3Tubesi1 channel     
NVMFS5C410NWFAFT1G


MOSFET T6-D3F 40V NFET
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USD 1.4959

Multiples of: 1

300 A40 V760 uOhmsN - Channel 2.5 V- 55 C+ 175 C166 w , 3.9 W  Cut TapeSi1 Channel10 V86 nCEnhancementAec - Q101 
FDBL9406_F085


MOSFET N-Channel Power Trench MOSFET
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USD 1.4984

Multiples of: 1

240 A40 V1.2 mOhmsn - channel20 V3.2 V- 55 C+ 175 C300 Wsmd/smtMO - 299A - 8Reelsi1 channel20 V90 nCenhancement powertrench
FQPF32N20C


MOSFET 200V N-Channel Advance Q-FET
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USD 1.506

Multiples of: 298

28 A200 V82 mOhmsn - channel  - 55 C+ 150 C50 Wthrough holeTO - 220FTubesi1 channel30 V enhancement qfet
FDMS10C4D2N


MOSFET Energy Inversion DC-AC
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USD 1.5087

Multiples of: 3000

         Smd/SmtPOWER - 56 - 8Cut TapeSi      
FCPF380N60E-F152


Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220F Tube
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USD 1.5107

Multiples of: 1

10.2 A600 V380 mOhmsN - Channel 3.5 V- 55 C+ 150 C31 WThrough HoleTO - 220 - 3 Si1 Channel20 V , 30 V34 nCEnhancement  
NTMYS011N04CTWG


N-Channel 40 V 13A (Ta), 35A (Tc) 3.8W (Ta), 28W (Tc) Surface Mount LFPAK4 (5x6)
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USD 1.5117

Multiples of: 3000

35 A40 V12 mOhmsN - Channel 3.5 V- 55 C+ 175 C28 WSmd/SmtLFPAK - 4Cut TapeSi1 Channel20 V7.9 nCEnhancement  
FDMS8050


Fairchild Semiconductor MOSFET PT8 N 3020 in Powerclip 56 Single
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USD 1.5135

Multiples of: 3000

         smd/smtPOWER - 56 - 8Reelsi1 channel  enhancement powertrench power clip
NDFP03N150CG


MOSFET N-CH Power MOSFET 1500V 2.5A
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USD 1.5148

Multiples of: 1

2.5 A1.5 kV10.5 Ohmsn - channel   + 150 C2 Wthrough holeTO - 220FP - 3Tubesi1 channel10 V34 nCenhancement  
FDP8860


MOSFET 30V N-Channel PowerTrench MOSFET
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USD 1.5177

Multiples of: 286

80 A30 V2.5 mOhmsn - channel  - 55 C+ 175 C254 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement powertrench
FDMC7572S


Fairchild Semiconductor MOSFET 25V 40A 3.2mOhm N-Ch PowerTrench SyncFET
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USD 1.5229

Multiples of: 294

40 A25 V3.2 mOhmsn - channel 1.7 V- 55 C+ 150 C52 Wsmd/smtPOWER - 33 - 8Reelsi1 channel    syncfet
FDMS4D5N08LC


MOSFET 80V 116A 4.2mOhm
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USD 1.528

Multiples of: 1

           Cut Tape       
BFL4001-1E


ON Semiconductor MOSFET
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USD 1.5314

Multiples of: 1

6.5 A900 V2.7 Ohmsn - channel      TO - 220 - 3Tube       
NTTFS4965NFTAG


MOSFET NFET U8FL 30V 64A 5.2MOHM
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USD 1.5432

Multiples of: 282

           Cut TapeSi      
FDMS8460


Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
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USD 1.5467

Multiples of: 3000

            powertrench®      
FDB024N08BL7


Fairchild Semiconductor MOSFET 80V N-Channel PowerTrench MOSFET
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USD 1.5497

Multiples of: 1

229 A80 V2.4 mOhmsn - channel 4.5 V- 55 C+ 175 C246 Wsmd/smtD2PAK - 7Reelsi1 channel20 V137 nCenhancement powertrench
FDMS8558SDC


MOSFET N-Channel PowerTrench SyncFET
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USD 1.5515

Multiples of: 1

17 A25 V5.7 mOhmsn - channel  - 55 C+ 150 C41 Wsmd/smtPOWER - 33Reelsi2 channel 81 nC  powertrench syncfet
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