HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only) Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS Satellite radio (SDARS, DMB, etc.) antenna LNA Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form NE3510M04 NE3510M04-A Flat-lead 4-pin 50 pcs (Non reel) V81 8 mm wide embossed taping thin-type super Pin 1 (Source), Pin 2 (Drain) face NE3510M04-T2 NE3510M04-T2-A 3 kpcs/reel minimold (M04) the perforation side of the tape <R> NE3510M04-T2B NE3510M04-T2B-A 15 kpcs/reel (Pb-Free) Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3510M04-A ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS 3.0 V Drain Current ID IDSS mA Gate Current IG 140 A Note Total Power Dissipation Ptot 125 mW Channel Temperature Tch +150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10676EJ02V0DS (2nd edition) Date Published October 2008 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. DISCONTINUEDNE3510M04 RECOMMENDED OPERATING CONDITIONS (TA = +25C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 2 3 V Drain Current ID 15 30 mA Input Power Pin 0 dBm ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V 0.5 10 A Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 42 70 97 mA Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100 A 0.35 0.7 1.10 V Transconductance gm VDS = 2 V, ID = 15 mA 70 mS Noise Figure NF VDS = 2 V, ID = 15 mA, f = 4 GHz 0.45 0.65 dB Associated Gain Ga 14.5 16 dB Gain 1 dB Compression PO (1 dB) VDS = 2 V, ID = 15 mA (Non-RF), +11 dBm Output Power f = 4 GHz 2 Data Sheet PG10676EJ02V0DS DISCONTINUED