X-On Electronics has gained recognition as a prominent supplier of NE3512S02-T1C-A RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. NE3512S02-T1C-A RF JFET Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

NE3512S02-T1C-A CEL

NE3512S02-T1C-A electronic component of CEL

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Part No.	NE3512S02-T1C-A
Manufacturer:	CEL
Category:	RF JFET Transistors
Description:	RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
Datasheet:	NE3512S02-T1C-A Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

NE3512S02-T1C-A More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 1.875 10 : USD 1.6921 25 : USD 1.5106 100 : USD 1.3595 250 : USD 1.2085 500 : USD 1.0574 1000 : USD 0.8762	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 1.875 10 : USD 1.6921	N/A Obsolete

Specifications

Manufacturer CEL CEL
Product Category RF JFET Transistors RF JFET Transistors
RoHS - XON 0 0
Packaging - -
Brand CEL CEL
Factory Pack Quantity : 3512 3512

We are delighted to provide the NE3512S02-T1C-A from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NE3512S02-T1C-A and other electronic components in the RF JFET Transistors category and beyond.

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Additional Infomation About Product

HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. f = 12 GHz Micro-X plastic (S02) package APPLICATIONS C to Ku-band DBS LNB Other C to Ku-band communication systems ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form NE3512S02-T1C NE3512S02-T1C-A S02 (Pb-Free) 2 kpcs/reel C 8 mm wide embossed taping Pin 4 (Gate) faces the perforation side NE3512S02-T1D NE3512S02-T1D-A 10 kpcs/reel of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3512S02-A ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4 V Gate to Source Voltage VGS 3 V Drain Current ID IDSS mA Gate Current IG 100 A Note Total Power Dissipation Ptot 165 mW Channel Temperature Tch +125 C Storage Temperature Tstg 65 to +125 C 2 Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10592EJ01V0DS (1st edition) Date Published February 2006 CP(N) DISCONTINUED Drop-In Replacement: CE3512K2NE3512S02 RECOMMENDED OPERATING CONDITIONS (TA = +25C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 1 2 3 V Drain Current ID 5 10 15 mA Input Power Pin 0 dBm ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V 0.5 10 A Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 40 70 mA Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100 A 0.2 0.7 2.0 V Transconductance gm VDS = 2 V, ID = 10 mA 40 55 mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz 0.35 0.5 dB Associated Gain Ga 12.5 13.5 dB 2 Data Sheet PG10592EJ01V0DS DISCONTINUED Drop-In Replacement: CE3512K2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

California Eastern Laboratories may also be referenced as

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