NTE5424 Silicon Controlled Rectifier (SCR) for TV Power Supply Switching, TO220 Description: The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for highspeed switching applications such as power inverters, switching regulators, and highcurrent pulse applica- tions. This device features fast turn off, high dv/dt, and high di/dt characteristics and may be used at frequencies up to 25kHz. Features: Fast TurnOff Time High di/dt and dv/dt Capabilities Shorted Emitter GateCathode Construction Low Thermal Resistance Center Gate Construction Absolute Maximum Ratings: Repetitive Peak OffState Voltage (Gate Open, Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . . . 400V DRM Repetitive Peak Reverse Voltage (Gate Open, Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V RRM RMS On State Current (T = +60C, t /t = 0.5), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A C 1 2 T(RMS) Average On State Current (T = +60C, t /t = 0.5), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A C 1 2 T(AV) Peak Surge (Non Repetitive) On State Current (One Cycle), I TSM 60Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A 50Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75A Peak Forward Gate Power Dissipation (10s max, Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . 13W GM Peak Reverse Gate Power Dissipation (10s max, Note 2), P . . . . . . . . . . . . . . . . . . . . . . . 13W RGM Average Gate Power Dissipation (10ms max, Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Rate of Change of On State Current V = 400V, I = 500mA, t = 0.5s), di/dt . . . . . . . 200A/s DM GT r 2 2 Fusing Current (T = +60C, 8.3ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26A s C Operating Case Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Lead Temperature (During Soldering, 10sec max), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +225C L Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2C/W thJC Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively biased. Note 2. Any product of gate current and gate voltage which results in a gate power less than the max- imum is permitted.Electrical Characteristics: (T = +25C, Maximum Ratings unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward Blocking Current I V = 400V, T = +100C 0.5 3.0 mA DRM D C Peak Reverse Blocking Current I V = 400V, T = +100C 0.3 1.5 mA RRM R C Forward ON Voltage V I = 30A 2.34 4.0 V TM TM Gate Trigger Current, Continuous DC I Anode Voltage = 12V, R = 30 50 mA GT L Gate Trigger Voltage, Continuous DC V Anode Voltage = 12V, R = 30 1.2 2.5 V GT L DC Holding Current I 20 50 mA H Rate of Rise of OffState Voltage dv/dt V = 400V, T = +80C 100 250 V/s D C TurnOn Time t V = 400V, I = 8A (Peak), 0.7 s gt D T I = 300mA, t = 0.1s GT r Circuit Commutated Turn Off Time t V = 400V, Pulse Duration = 50s, 4.4 s q D dv/dt = 100V/s, di/dt = 10A/s, I = 100mA at turnon, I = 4A, GT T V = 0V at turnoff, T = +75C GK C .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode Gate .100 (2.54) Anode/Tab