FFPF04S60S 4 A, 600 V, STEALTH II Diode October 2007 FFPF04S60S tm Features 4 A, 600 V, STEALTH II Diode Stealth Recovery t = 25 ns ( I = 4 A) rr F The FFPF04S60S is a STEALTH II diode with soft recovery Max Forward Voltage, V = 2.6 V ( T = 25C) F C characteristics. It is silicon nitride passivated ion-implanted 600 V Reverse Voltage and High Reliability epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and Avalanche Energy Rated other power swithching applications. Their low stored charge RoHS Compliant and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications General Purpose Switching Mode Power Supply Boost Diode in Continuous Mode Power Factor Corrections Power Switching Circuits TO-220F-2L 1. Cathode 2. Anode 1. Cathode 2. Anode o Absolute Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Rating Unit V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R o I Average Rectified Forward Current T = 116 C 4 A F(AV) C Non-repetitive Peak Surge Current I 40 A FSM 60Hz Single Half-Sine Wave o T , T Operating and Storage Temperature Range -65 to +150 C J STG Thermal Characteristics Symbol Parameter Rating Unit o R Maximum Thermal Resistance, Junction to Case 6.8 C/W JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F04S60S FFPF04S60STU TO-220F-2L - - 50 2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FFPF04S60S Rev. AFFPF04S60S 4 A, 600 V, STEALTH II Diode o Electrical Characteristics T = 25 C unless otherwise noted C Symbol Parameter Min. Typ. Max. Unit o I = 4 A T = 25 C - 2.2 2.6 F C V 1 V F o I = 4 A T = 125 C - 1.7 - F C o V = 600 V T = 25 C - - 100 R C I 1 A R o V = 600 V T = 125 C - - 500 R C o t I = 1 A, di/dt = 100 A/ s, V = 30 V T = 25 C - 16 23 ns rr F R C t - 18 25 ns rr I - 2 - A rr o I = 4 A, di/dt = 200 A/ s, V = 390 V T = 25 C F R C S factor - 0.7 - Q - 18 - nC rr t - 45 - ns rr I - 2.8 - A rr o I = 4 A, di/dt = 200 A/ s, V = 390 V T = 125 C F R C S factor - 1.8 - Q - 64 - nC rr W Avalanche Energy ( L = 40 mH) 10 - - mJ AVL Notes: 1: Pulse: Test Pulse width = 300s, Duty Cycle = 2% Test Circuit and Waveforms 2007 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FFPF04S60S Rev. A