X-On Electronics has gained recognition as a prominent supplier of NVA4001NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVA4001NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVA4001NT1G ON Semiconductor

NVA4001NT1G electronic component of ON Semiconductor
NVA4001NT1G ON Semiconductor
NVA4001NT1G MOSFETs
NVA4001NT1G  Semiconductors

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See Product Specifications
Part No. NVA4001NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET
Datasheet: NVA4001NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
572: USD 0.1136 ea
Line Total: USD 64.98 
Availability - 98940
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ: 572  Multiples: 1
Pack Size: 1
Availability Price Quantity
98940
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 180
Multiples : 1
180 : USD 0.3604
271 : USD 0.2402
572 : USD 0.1136
1000 : USD 0.1028
3000 : USD 0.0987
9000 : USD 0.0798
24000 : USD 0.0714

6060
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 173
Multiples : 1
173 : USD 0.3765
173 : USD 0.3749
174 : USD 0.3734
175 : USD 0.3718
250 : USD 0.3703
500 : USD 0.3687
1000 : USD 0.3671
3000 : USD 0.3656
6000 : USD 0.364

6060
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 174
Multiples : 1
174 : USD 0.3734
175 : USD 0.3718
250 : USD 0.3703
500 : USD 0.3687
1000 : USD 0.3671
3000 : USD 0.3656
6000 : USD 0.364

98940
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 572
Multiples : 1
572 : USD 0.1136
1000 : USD 0.1028
3000 : USD 0.0987
9000 : USD 0.0798
24000 : USD 0.0714

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qualification
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVA4001NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVA4001NT1G and other electronic components in the MOSFETs category and beyond.

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NTA4001N, NVA4001N MOSFET Single, N-Channel, Gate ESD Protection, Small Signal, SC-75 NTA4001N, NVA4001N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 100 A 20 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 0 V, V = 20 V 1.0 A DSS GS DS GatetoSource Leakage Current I V = 0 V, V = 10 V 100 A GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = 3 V, I = 100 A 0.5 1.0 1.5 V GS(TH) DS D DraintoSource On Resistance R V = 4.5 V, I = 10 mA 1.5 3.0 DS(on) GS D V = 2.5 V, I = 10 mA 2.2 3.5 GS D Forward Transconductance g V = 3 V, I = 10 mA 80 mS FS DS D CAPACITANCES Input Capacitance C 11.5 20 ISS V = 5 V, f = 1 MHz, DS Output Capacitance C 10 15 OSS pF V = 0 V GS Reverse Transfer Capacitance C 3.5 6.0 RSS SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 13 ns d(ON) Rise Time t 15 r V = 4.5 V, V = 5 V, GS DS I = 10 mA, R = 10 D G TurnOff Delay Time t 98 ns d(OFF) Fall Time t 60 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 10 mA 0.66 0.8 V SD GS S 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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