NVATS5A113PLZ Power MOSFET 60 V, 29.5 m, 38 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. V R (on) Max I Features DSS DS D Max Low On-Resistance 29.5 m 10 V High Current Capability 60 V 38 m 4.5 V 38 A 100% Avalanche Tested 44 m 4 V AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252) ELECTRICAL CONNECTION Pb-Free, Halogen Free and RoHS compliance P-Channel 2, 4 Typical Applications Reverse Battery Protection Load Switch Automotive Front Lighting 1 Automotive Body Controllers 1 : Gate 2 : Drain 3 : Source SPECIFICATIONS 4 : Drain ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 3 Parameter Symbol Value Unit Drain to Source Voltage V 60 V DSS Gate to Source Voltage V 20 V GSS 4 Drain Current (DC) I 38 A D Drain Current (Pulse) I 114 A DP PW 10 s, duty cycle 1% 1 2 Power Dissipation P 60 W ATPAK 3 D Tc = 25C Operating Junction and Tj, Tstg 55 to +175 C Storage Temperature MARKING Avalanche Energy (Single Pulse) (Note 2) E 95 mJ AS Avalanche Current (Note 3) I 18 A AV Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : V = 10 V, L = 500 H, I = 18 A DD AV 3 : L 500 H, Single pulse ORDERING INFORMATION THERMAL RESISTANCE RATINGS See detailed ordering and shipping Parameter Symbol Value Unit information on page 6 of this data sheet. Junction to Case Steady State (Tc = 25 C) R 2.5 C/W JC C/W Junction to Ambient (Note 4) R 80.1 JA 2 Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : June 2016 - Rev. 0 NVATS5A113PLZ/D NVATS5A113PLZ ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1 mA, V = 0 V V BR DSS D GS 60 I V = 60 V, V = 0 V Zero-Gate Voltage Drain Current DSS 1 A DS GS I Gate to Source Leakage Current V = 16 V, V = 0 V 10 A GSS GS DS V (th) Gate Threshold Voltage V = 10 V, I = 1 mA 1.2 2.6 V GS DS D Forward Transconductance g V = 10 V, I = 18 A 37 S FS DS D I = 18 A, V = 10 V 22.5 29.5 m D GS Static Drain to Source On-State R (on) I = 9 A, V = 4.5 V 27 38 m DS D GS Resistance I = 5 A, V = 4 V 29 44 D GS m Input Capacitance Ciss 2,400 pF V = 20 V, f = 1 MHz Output Capacitance Coss 250 pF DS Reverse Transfer Capacitance Crss 195 pF t (on) Turn-ON Delay Time 15 ns d Rise Time t 125 ns r See Fig.1 t (off) Turn-OFF Delay Time d 250 ns t Fall Time 200 ns f Total Gate Charge Qg 55 nC Gate to Source Charge Qgs V = 30 V, V = 10 V, I = 35 A 7.5 nC DS GS D Gate to Drain Miller Charge Qgd 12 nC V I = 35 A, V = 0 V Forward Diode Voltage 0.98 1.5 V SD S GS Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2