X-On Electronics has gained recognition as a prominent supplier of NVA4153NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVA4153NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVA4153NT1G ON Semiconductor

NVA4153NT1G electronic component of ON Semiconductor
NVA4153NT1G ON Semiconductor
NVA4153NT1G MOSFETs
NVA4153NT1G  Semiconductors

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See Product Specifications
Part No. NVA4153NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET NFET SC75 20V 915MA 230MO
Datasheet: NVA4153NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7249 ea
Line Total: USD 0.72 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.8522
6000 : USD 0.8453
9000 : USD 0.8385
12000 : USD 0.8316
15000 : USD 0.8247
24000 : USD 0.8177
30000 : USD 0.8108
45000 : USD 0.8038
75000 : USD 0.7968

0
Ship by Mon. 06 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7249
10 : USD 0.66
100 : USD 0.6039
250 : USD 0.5786
500 : USD 0.5423
1000 : USD 0.5236
3000 : USD 0.2332
6000 : USD 0.2255
9000 : USD 0.2233

0
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 36
Multiples : 36
36 : USD 0.3528
50 : USD 0.2729
100 : USD 0.2674

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVA4153NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVA4153NT1G and other electronic components in the MOSFETs category and beyond.

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NTA4153N, NTE4153N, NVA4153N, NVE4153N MOSFET Single, N-Channel with ESD Protection, Small Signal, SC-75 and SC-89 NTA4153N, NTE4153N, NVA4153N, NVE4153N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 26 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 18.4 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, V = 16 V 100 nA DSS GS DS GatetoSource Leakage Current I V = 0 V, V = 4.5 V 1.0 A GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.45 0.76 1.1 V GS(TH) GS DS D Negative Threshold Temperature V /T 2.15 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V, I = 600 mA 127 230 DS(on) GS D m V = 2.5 V, I = 500 mA 170 275 GS D V = 1.8 V, I = 350 mA 242 700 GS D V = 1.5 V, I = 40 mA 500 950 GS D Forward Transconductance g V = 10 V, I = 400 mA 1.4 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 110 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 16 OSS V = 16 V DS Reverse Transfer Capacitance C 12 RSS Total Gate Charge Q 1.82 nC G(TOT) Threshold Gate Charge Q 0.2 G(TH) V = 4.5 V, V = 10 V, GS DS I = 0.2 A D GatetoSource Charge Q 0.3 GS GatetoDrain Charge Q 0.42 GD SWITCHING CHARACTERISTICS (Note 3) ns TurnOn Delay Time t 3.7 d(ON) Rise Time t 4.4 r V = 4.5 V, V = 10 V, GS DD I = 0.2 A, R = 10 D G TurnOff Delay Time t 25 d(OFF) Fall Time t 7.6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.67 1.1 V SD J V = 0 V, GS I = 200 mA S T = 125C 0.54 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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