X-On Electronics has gained recognition as a prominent supplier of BP 104 F Photodiodes across the USA, India, Europe, Australia, and various other global locations. BP 104 F Photodiodes are a product manufactured by OSRAM. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

BP 104 F OSRAM

BP 104 F electronic component of OSRAM
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See Product Specifications
Part No.BP 104 F
Manufacturer: OSRAM
Category: Photodiodes
Description: Photodiodes Si-Pin Photodiode 800-1100nm range
Datasheet: BP 104 F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 5000
Multiples : 1
5000 : USD 0.3406
50000 : USD 0.336
500000 : USD 0.3086
2500000 : USD 0.2914
5000000 : USD 0.2912
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.1375
10 : USD 0.9184
100 : USD 0.517
500 : USD 0.4366
1000 : USD 0.3625
2000 : USD 0.3378
10000 : USD 0.3378
25000 : USD 0.3378
50000 : USD 0.3249
N/A

Obsolete
0
MOQ : 22
Multiples : 1
22 : USD 1.2434
25 : USD 1.0173
50 : USD 0.9869
100 : USD 0.7791
250 : USD 0.5943
500 : USD 0.4521
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Package / Case
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Forward Current
Power Dissipation
Noise Equivalent Power - Nep
Photocurrent
Responsivity
Factory Pack Quantity :
Height
Width
Cnhts
Hts Code
If - Forward Current
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BP 104 F from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BP 104 F and other electronic components in the Photodiodes category and beyond.

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2014-01-17 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.1 BP 104 F Features: Besondere Merkmale: Especially suitable for applications of 950 nm Speziell geeignet fr Anwendungen bei 950 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) DIL plastic package with high packing density DIL-Plastikbauform mit hoher Packungsdichte Applications Anwendungen Photointerrupters Lichtschranken Remote control Fernsteuerung Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 1 mW/cm , V = 5 V e R I A P BP 104 F 34 ( 25) Q62702P0084 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 20 V R Sperrspannung Total power dissipation P 150 mW tot Verlustleistung 2014-01-17 1Version 1.1 BP 104 F Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent I 34 ( 25) A P Fotostrom 2 (V = 5 V, E = 1 mW/cm , = 950 nm) R e Wavelength of max. sensitivity 950 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 800 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A4.84 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.2 x 2.2 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.7 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 950 nm) Quantum yield of the chip 0.91 Electro Quantenausbeute des Chips ns ( = 950 nm) /Photon Open-circuit voltage V 330 ( 250) mV O Leerlaufspannung 2 (E = 0.5 mW/cm , = 950 nm) e Short-circuit current I 17 A SC Kurzschlussstrom 2 (E = 0.5 mW/cm , = 950 nm) e Rise and fall time t , t 0.02 s r f Anstiegs- und Abfallzeit (R = 50 V = 5 V = 850 nm I = 800 A) L R p Forward voltage V 1.3 V F Durchlassspannung (I = 100 mA, E = 0) F 2014-01-17 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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