X-On Electronics has gained recognition as a prominent supplier of BP 104 FASR-Z Photodiodes across the USA, India, Europe, Australia, and various other global locations. BP 104 FASR-Z Photodiodes are a product manufactured by OSRAM. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

BP 104 FASR-Z OSRAM

BP 104 FASR-Z electronic component of OSRAM
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See Product Specifications
Part No.BP 104 FASR-Z
Manufacturer: OSRAM
Category: Photodiodes
Description: Photodiodes PHOTODIODE, SMT
Datasheet: BP 104 FASR-Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0982 ea
Line Total: USD 1.1 
Availability - 314
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
314
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0982
10 : USD 0.7038
100 : USD 0.5428
500 : USD 0.5071
1000 : USD 0.4634
1500 : USD 0.4243
3000 : USD 0.4243
9000 : USD 0.4174

   
Manufacturer
Product Category
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Package / Case
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Package Case
Brand
Forward Current
Power Dissipation
Noise Equivalent Power Nep
Photocurrent
Responsivity
Factory Pack Quantity :
Rohs Mouser
Height
Packaging
Width
Cnhts
Hts Code
If - Forward Current
Mxhts
Noise Equivalent Power - Nep
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BP 104 FASR-Z from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BP 104 FASR-Z and other electronic components in the Photodiodes category and beyond.

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2007-04-18 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BP 104 FASR Features: Besondere Merkmale: Especially suitable for applications from Speziell geeignet fr Anwendungen im Bereich von 730 nm... 1100 nm 730 nm bis 1100 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) Suitable for SMT SMT-fhig Applications Anwendungen Photointerrupters Lichtschranken IR remote control of hi-fi and TV sets, video tape IR-Fernsteuerung von Fernseh- und recorders, dimmers, remote controls of various Rundfunkgerten, Videorecordern, Lichtdimmern, equipment Gertefernsteuerungen Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 870 nm, E = 1 mW/cm , V = 5 V e R I A P BP 104 FASR 34 ( 25) Q65110A4263 2007-04-18 1Version 1.0 BP 104 FASR Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 20 V R Sperrspannung Total power dissipation P 150 mW tot Verlustleistung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent I 34 ( 25) A P Fotostrom 2 (V = 5 V, = 870 nm, E = 1 mW/cm ) R e Wavelength of max. sensitivity 880 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 730 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A4.84 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.2 x 2.2 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.63 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 870 nm) Quantum yield of the chip 0.90 Electro Quantenausbeute des Chips ns ( = 870 nm) /Photon 2007-04-18 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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