X-On Electronics has gained recognition as a prominent supplier of RPR-359F Optical Switches, Reflective, Phototransistor Output across the USA, India, Europe, Australia, and various other global locations. RPR-359F Optical Switches, Reflective, Phototransistor Output are a product manufactured by ROHM. We provide cost-effective solutions for Optical Switches, Reflective, Phototransistor Output, ensuring timely deliveries around the world.

RPR-359F ROHM

RPR-359F electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RPR-359F
Manufacturer: ROHM
Category: Optical Switches, Reflective, Phototransistor Output
Description: ROHM Semiconductor Optical Switches, Reflective, Phototransistor Output PHTOINTRUPTR RFLCTVE PHTOTRNSISTR 4PIN
Datasheet: RPR-359F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.3925 ea
Line Total: USD 3.39 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 3.3925
10 : USD 2.6795
100 : USD 1.9435
200 : USD 1.863
600 : USD 1.8515
1000 : USD 1.817
2600 : USD 1.8055
5000 : USD 1.794
10000 : USD 1.7825

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Sensing Distance
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Series
Packaging
Vf - Forward Voltage
Vr - Reverse Voltage
Output Type
Sensing Method
Wavelength
Brand
Number Of Channels
Fall Time
If - Forward Current
Rise Time
Factory Pack Quantity :
Height
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RPR-359F from our Optical Switches, Reflective, Phototransistor Output category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RPR-359F and other electronic components in the Optical Switches, Reflective, Phototransistor Output category and beyond.

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RPR-359F Sensors Reflective photosensor (photoreflector) RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in plastic with a visible light filter, there is almost no effect from stay light. External dimensions (Units : mm) Application Copiers, Compact disc players Notes : 8.70.1 1. Unspecified tolerance shall be 0.2. 2. Dimension in parenthesis are show 0.5 0.5 3.6 3.6 0.5 for reference. 1 Cathode Features 2 Anode 1 3 3 Collector 2 1) A plastic lens is used for high sensitivity. 4 4 Emitter 2) A built-in visible light filter minimizes the influence of stray light. 0.35 3) Low collector-emitter saturation voltage. 4) Lightweight and compact. (2.5) (4.2) 0.60.1 4 0.50.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Forward current IF 50 mA Input Reverse voltage VR 5 V (LED) Power dissipation PD 80 mW Collector-emitter voltage VCEO 30 V Output Emitter-collector voltage VECO 4.5 V (Photo- Collector current IC 30 mA transistor) Collector power dissipation PC 100 mW Operating temperature Topr 25+85 C Storage temperature Tstg 40+100 C 1/3 2.00.3 0.65 0.65 12Min. 5.80.1 4.50.1 2.10.5 4.4 5.80.5RPR-359F Sensors Electrical and optical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 1.3 1.6 VIF=50mA Input characteristics Reverse current IR 10 A VR=5V Dark current ICEO 0.5 A VCE=10V Output characteristics Peak sensitivity wavelength P 800 nm Collector current IC 200 500 1800 A VCC= IF= RL= 5V, 20mA, 100 , d=3.5mm Transfer Collector-emitter saturation voltage VCE(sat) 0.1 0.3 V IF= IC= 20mA, 100 A characteristics Response time trtf 10 s VCC= IF= RL= 10V, 20mA, 100 Standard paper (90% reflection) Electrical and optical characteristic curves 100 1A 2.0 P Ta=25C C 80 1.6 PD 100 1.2 60 10mA 10 1mA 40 0.8 1 20 0.4 0.1 0 0 0 20 40 60 80 100 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20406080 100 AMBIENT TEMPERATURE : Ta (C) FORWARD VOLTAGE : VF (V) AMBIENT TEMPERATURE : Ta (C) Fig.2 Forward current Fig.1 Power dissipation / collector power Fig.3 Forward voltage vs. forward voltage dissipation vs. ambient temperature vs. ambient tempereture 10 VCC=5V 2.4 Standard paper Standard paper (90% reflection) 2.2 (90% reflection) d=3.5mm d=3.5mm 2.0 1 VCE=30V 1.8 20V 1 IF=40mA 1.6 10V 1.4 30mA 0.1 1.2 1.0 0.1 0.8 20mA 0.6 0.01 15mA 0.4 10mA 0.2 5mA 0.01 0 0.001 0.1 1 10 100 0 5 10 15 20 25 100 80 60 40 20 0 20 40 60 80 100 120 140 FORWARD CURRENT : IF (mA) AMBIENT TEMPERATURE : Ta (C) COLLECTOREMITTER VOLTAGE : VCE (V) Fig.4 Collector current Fig.5 Output characteristics Fig.6 Dark current vs. forward current vs.ambient temperature 2/3 COLLECTOR CURRENT : IC (mA) POWER DISSIPATION / COLLECTOR POWER DISSIPATION : PD/PC (mW) COLLECTOR CURRENT : IC (mA) FORWARD CURRENT : IF (mA) FORWARD VOLTAGE : VF (V) DARK CURRENT : ICEO ( A)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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