Phototransistor, top view type RPT-37PB3F Datasheet The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. It is possible to distinguish the polarity by the shape of ramp type. Applications Outline Optical control equipment Receiver for sensors Features 1) High sensitivity. 2) Almost no effect from stray light. Dimensions (Unit : mm) Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Collector-emitter voltage 32 V CEO V Emitter-collector voltage 5 V ECO I 30 mA Collector current C P 150 mW Collector power dissipation C T Operating temperature 25 to 85 C opr T Storage temperature 30 to 85 C stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.C 1/5Datasheet RPT-37PB3F Electrical and optical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. I V =5V, E=500Lx Light current 2.0 - - mA C CE I V =10V (Black box) -- 0.5 Dark current A CEO CE Peak sensitivity wavelength -- 800 - nm p V I =1mA, E=500Lx -- 0.4 V Collector-emitter saturationv oltage CE(sat) C - - - deg Half-angle 36 1/2 V =5V, I =1mA, CC C Response time trtf - 10 - s R =100 L Classified table of rank Light current : I Unit Item C Lt2.0o 5.0 mA 3.0 8.0 mA Mto Nt5.5o 13.0 mA www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.C 2/5