X-On Electronics has gained recognition as a prominent supplier of UMZC6.8NT106 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. UMZC6.8NT106 ESD Suppressors / TVS Diodes are a product manufactured by ROHM. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

UMZC6.8NT106 ROHM

UMZC6.8NT106 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.UMZC6.8NT106
Manufacturer: ROHM
Category: ESD Suppressors / TVS Diodes
Description: ROHM Semiconductor TVS Diode Arrays DIODES; ZENER; LO-CAPACITANCE
Datasheet: UMZC6.8NT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4082 ea
Line Total: USD 0.41

Availability - 1916
Ship by Thu. 15 Aug to Mon. 19 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Fri. 16 Aug to Wed. 21 Aug
MOQ : 1
Multiples : 1
1 : USD 0.1713
10 : USD 0.1363
30 : USD 0.1215
100 : USD 0.1029
500 : USD 0.0946
1000 : USD 0.0896

1916
Ship by Thu. 15 Aug to Mon. 19 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4082
10 : USD 0.2806
100 : USD 0.176
500 : USD 0.1472
1000 : USD 0.1196
3000 : USD 0.092
9000 : USD 0.092
24000 : USD 0.092
45000 : USD 0.0874

15755
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 443
Multiples : 443
443 : USD 0.2302
500 : USD 0.2219
1000 : USD 0.2148
2500 : USD 0.2084
5000 : USD 0.2028
10000 : USD 0.1979

   
Manufacturer
Product Category
RoHS - XON
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Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
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We are delighted to provide the UMZC6.8NT106 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMZC6.8NT106 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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Data Sheet ESD Protection Diode UMZC6.8N Applications Dimensions Unit : mm Land size figure(Unit : mm) ESD Protection 1.3 (common anode configuration) 2.0 0.2 0.3 0.1 Each lead has same dimension 0.15 0.05 Features 0.65 (3) 1) Small mold type. (UMD3) 2) High reliability 0.8MIN. UMD3 0 0.1 (2 ) (1 ) 0.65 0.65 Construction Structure 0. 7 0 .1 1. 3 0. 1 Silicon epitaxial planar 0. 9 0 .1 ROHM : UMD3 JEDEC :S0T-323 JEITA : SC-70 week code Taping specificationsUnit : mm 1.550.05 2.00.05 4.00.1 0.30.1 2.250.1 0.50.05 4.00.1 0 1.250.1 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation P ()m200 W Junction temperature T 150 C j Storage temperature -55 to +150 Tstg C Electrical characteristic (Ta=25C)( Rating of per diode) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V 6.47 - 7.14 V I =5mA Z Z Reverse current I - - 0.50 A V =3.5V R R Capacitance between terminals Ct - 3 - pF V =0V , f=1MHz R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.02 - Rev.A 1/2 1.250.1 2. 1 0 .1 0. 1M in 2.40.1 0.9MIN. 5.50.2 00.1 3.50.05 1.750.1 8.00.2 2.40.1 1.6UMZC6.8N Data Sheet Electrical characteristic curves Ta=150 Ta=125 10 10 100 f=1MHz Ta=75 10 Ta=25 Ta=75 1 1 Ta=125 0.1 Ta=-25 1 Ta=25 Ta=150 0.01 0.1 Ta=-25 0.001 0.0001 0.1 0.01 0.00001 0 0.5 1 1.5 2 2.5 3 3.5 4 6 6.5 7 7.5 8 01234 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 7 0.2 10 Ta=25 Ta=25 0.18 Ta=25 9 IZ=5mA VR=3.5V f=1MHz 6.9 0.16 8 n=30pcs n=30pcs VR=0V 0.14 7 n=10pcs 6.8 0.12 6 0.1 5 AVE:3.10pF AVE:6.830V 0.08 4 6.7 3 0.06 AVE:0.0143nA 0.04 2 6.6 0.02 1 0 0 6.5 Ct DISRESION MAP Vz DISRESION MAP IR DISRESION MAP 100 1000 Rth(j-a) Rth(j-c) 100 10 Mounted on epoxy board IM=10mA IF=100mA 10 time 1ms 300us 1 1 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.02 - Rev.A ZENER VOLTAGE:Vz() ZENER CURRENT:Iz(mA) DYNAMIC IMPEDANCE:Zz() REVERSE CURRENT:IR (nA) TRANSIENT REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE TERMINALS:Ct(pF) BETWEENTERMINALS:Ct(pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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