STGW100H65FB2-4 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 package Features Maximum junction temperature: T = 175 C J Low V = 1.55 V (typ.) I = 100 A CE(sat) C Minimized tail current Tight parameter distribution 4 3 Low thermal resistance 2 1 Positive V temperature coefficient CE(sat) TO247-4 Excellent switching performance thanks to the extra driving kelvin pin C(1,TAB) Applications Welding Power factor correction G(4) UPS Solar inverters K(3) Chargers Description E(2) NG4K3E2C1TAB no diode The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better V behavior at low current CE(sat) values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGW100H65FB2-4 Product summary Order code STGW100H65FB2-4 Marking G100H65FB2 Package TO247-4 Packing Tube DS13447 - Rev 3 - July 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGW100H65FB2-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 145 C I A C Continuous collector current at T = 100 C 91 C (1) I Pulsed collector current (t 1 s, T < 175 C) 300 A p J CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage (t 10 s) 30 p P Total power dissipation at T = 25 C 441 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Defined by design, not subject to production test. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.34 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS13447 - Rev 3 page 2/14