STGW75H65DFB2-4 Datasheet Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package Features Maximum junction temperature: T = 175 C J Low V = 1.55 V(typ.) I = 75 A CE(sat) C Very fast and soft recovery co-packaged diode Minimized tail current 4 3 Tight parameter distribution 2 1 Low thermal resistance TO247-4 Positive V temperature coefficient CE(sat) Excellent switching performance thanks to the extra driving kelvin pin C(1, TAB) Applications G(4) Welding K(3) Power factor correction UPS E(2) Solar inverters NG4K3E2C1 TAB Chargers Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better V behavior at low current CE(sat) values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGW75H65DFB2-4 Product summary Order code STGW75H65DFB2-4 Marking G75H65DFB2 Package TO247-4 Packing Tube DS13421 - Rev 1 - August 2020 www.st.com For further information contact your local STMicroelectronics sales office.STGW75H65DFB2-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 115 C I C Continuous collector current at T = 100 C 71 A C (1) I Pulsed collector current (t 1 s, T < 175 C) 225 p J CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage (t 10 s) 30 p Continuous forward current at T = 25 C 110 C I F Continuous forward current at T = 100 C 65 A C (1) I Pulsed forward current (t 1 s, T < 175 C) 195 FP p J P Total power dissipation at T = 25 C 357 W TOT C T Storage temperature range -55 to 150 STG C T Operating junction temperature range -55 to 175 J 1. Defined by design, not subject to production test. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.42 R thJC Thermal resistance junction-case diode 0.49 C/W R Thermal resistance junction-ambient 50 thJA DS13421 - Rev 1 page 2/15