STGWA100H65DFB2 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247 long leads package Features Maximum junction temperature: T = 175 C J Low V = 1.55 V (typ.) I = 100 A CE(sat) C Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution TO-247 long leads Low thermal resistance Positive V temperature coefficient CE(sat) C(2, TAB) Applications Welding G(1) Power factor correction UPS Solar inverters E(3) NG1E3C2T Chargers Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better V behavior at low current CE(sat) values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGWA100H65DFB2 Product summary Order code STGWA100H65DFB2 Marking G100H65DFB2 Package TO-247 long leads Packing Tube DS13277 - Rev 2 - July 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGWA100H65DFB2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 145 C I A C Continuous collector current at T = 100 C 91 C (1) I Pulsed collector current (t 1 s, T < 175 C) 300 A p J CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage (t 10 s) 30 p Continuous forward current at T = 25 C 110 C I A F Continuous forward current at T = 100 C 65 C (1) I Pulsed forward current (t 1 s, T < 175 C) 300 A p J FP P Total power dissipation at T = 25 C 441 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Defined by design, not subject to production test. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance, junction-to-case IGBT 0.34 R C/W thJC Thermal resistance, junction-to-case diode 0.49 R Thermal resistance, junction-to-ambient 50 C/W thJA DS13277 - Rev 2 page 2/15