STGWA30IH65DF STMicroelectronics

STGWA30IH65DF Datasheet Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO247 long leads package Features Designed for soft commutation only Maximum junction temperature: T = 175 C J V = 1.55 V (typ.) I = 30 A CE(sat) C Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-packaged diode C(2, TAB) Positive V temperature coefficient CE(sat) Applications G(1) Induction heating Resonant converters Microwave ovens E(3) NG1E3C2T Description The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft- switching applications. Product status link STGWA30IH65DF Product summary Order code STGWA30IH65DF Marking G30IH65DF Package TO-247 long leads Packing Tube DS13283 - Rev 1 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.STGWA30IH65DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 60 C I A C Continuous collector current at T = 100 C 30 C (1) I Pulsed collector current 90 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage (t 10 s) 30 V p Continuous forward current at T = 25 C 30 C I F Continuous forward current at T = 100 C 15 A C (1) I Pulsed forward current 90 FP P Total power dissipation at T = 25 C 180 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Defined by design, not subjected to production test. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.83 R thJC Thermal resistance junction-case diode 2.08 C/W R Thermal resistance junction-ambient 50 thJA DS13283 - Rev 1 page 2/14