STGWA60V60DWFAG STMicroelectronics

STGWA60V60DWFAG Datasheet Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode Features AEC-Q101 qualified Maximum junction temperature: T = 175 C J V = 1.85 V (typ.) I = 60 A CE(sat) C Tail-less switching current Tight parameter distribution Low thermal resistance C(2, TAB) Positive V temperature coefficient CE(sat) Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration G(1) Applications Automotive converters Totem-pole power factor correction E(3) NG1E3C2T Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V temperature CE(sat) coefficient and very tight parameter distribution result in safer paralleling operation. Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is shown at turn-off of the SiC diode and the already minimal capacitive turn-off behavior is independent of temperature. Its high forward surge capability ensures good robustness during transient phases. Product status link STGWA60V60DWFAG Product summary Order code STGWA60V60DWFAG Marking G60V60DWFAG Package TO-247 long leads Packing Tube DS13117 - Rev 2 - October 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGWA60V60DWFAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE (1) Continuous collector current at T = 25 C 80 C I C Continuous collector current at T = 100 C 60 A C (1) I Pulsed collector current (t 1 s, T < 175 C) 240 p J CP V Gate-emitter voltage 20 V GE I Continuous forward current at T = 100 C 30 F C A (1) I Repetitive peak forward current (T = 100 C, T = 175 C, = 0.1) 125 FRM C J P Total power dissipation at T = 25 C 375 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Limited by bonding wires. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.4 R thJC Thermal resistance junction-case diode 0.9 C/W R Thermal resistance junction-ambient 50 thJA DS13117 - Rev 2 page 2/16